分离式半导体产品 SI4214DY-T1-GE3品牌、价格、PDF参数

SI4214DY-T1-GE3 • 品牌、价格
元器件型号 厂商 描述 数量 价格
SI4214DY-T1-GE3 Vishay Siliconix MOSFET N-CH D-S 30V 8-SOIC 0 2,500:$0.25375
SI3529DV-T1-GE3 Vishay Siliconix MOSFET N/P-CH 40V 6-TSOP 0 3,000:$0.21750
SI3529DV-T1-E3 Vishay Siliconix MOSFET N/P-CH 40V 6-TSOP 0 3,000:$0.21750
SI1970DH-T1-GE3 Vishay Siliconix MOSFET N-CH DUAL 30V SC70-6 0 3,000:$0.21750
SI1988DH-T1-GE3 Vishay Siliconix MOSFET N-CH 20V DUAL SC-70-6 0 1:$0.66000
25:$0.51000
100:$0.45000
250:$0.39000
500:$0.33000
1,000:$0.26250
SI1988DH-T1-GE3 Vishay Siliconix MOSFET N-CH 20V DUAL SC-70-6 0 1:$0.66000
25:$0.51000
100:$0.45000
250:$0.39000
500:$0.33000
1,000:$0.26250
SI1988DH-T1-GE3 Vishay Siliconix MOSFET N-CH 20V DUAL SC-70-6 0 3,000:$0.21750
6,000:$0.20250
15,000:$0.19500
30,000:$0.18750
75,000:$0.18450
150,000:$0.18000
SI4214DY-T1-GE3 • PDF参数
类别: 分离式半导体产品
FET 型: 2 个 N 沟道(双)
FET 特点: 逻辑电平门
漏极至源极电压(Vdss): 30V
电流 - 连续漏极(Id) @ 25° C: 8.5A
开态Rds(最大)@ Id, Vgs @ 25° C: 23.5 毫欧 @ 7A,10V
Id 时的 Vgs(th)(最大): 2.5V @ 250µA
闸电荷(Qg) @ Vgs: 23nC @ 10V
输入电容 (Ciss) @ Vds: 785pF @ 15V
功率 - 最大: 3.1W
安装类型: 表面贴装
封装/外壳: 8-SOIC(0.154",3.90mm 宽)
供应商设备封装: 8-SOICN
包装: 带卷 (TR)