分离式半导体产品 SQJ970EP-T1-GE3品牌、价格、PDF参数

SQJ970EP-T1-GE3 • 品牌、价格
元器件型号 厂商 描述 数量 价格
SQJ970EP-T1-GE3 Vishay Siliconix MOSFET DUAL N-CH 40V PPAK 8SOIC 0 3,000:$0.99900
SQ4936EY-T1-GE3 Vishay Siliconix MOSFET DUAL N-CH 30V 7A 8SOIC 0 2,500:$0.97200
SI4563DY-T1-GE3 Vishay Siliconix MOSFET N/P-CH 40V 8-SOIC 0 2,500:$0.97200
SI7997DP-T1-GE3 Vishay Siliconix MOSFET P-CH 30V 8-SOIC 0 1:$2.49000
25:$1.91720
100:$1.73950
250:$1.56200
500:$1.34900
1,000:$1.13600
SI7997DP-T1-GE3 Vishay Siliconix MOSFET P-CH 30V 8-SOIC 0 1:$2.49000
25:$1.91720
100:$1.73950
250:$1.56200
500:$1.34900
1,000:$1.13600
SI7997DP-T1-GE3 Vishay Siliconix MOSFET P-CH 30V 8-SOIC 0 3,000:$0.95850
6,000:$0.92300
15,000:$0.88750
30,000:$0.86975
75,000:$0.85200
SI7905DN-T1-E3 Vishay Siliconix MOSFET DUAL P-CH D-S 40V 1212-8 0 3,000:$0.90450
SI4943BDY-T1-GE3 Vishay Siliconix MOSFET P-CH D-S 20V 8-SOIC 0 2,500:$0.90450
SQJ970EP-T1-GE3 • PDF参数
类别: 分离式半导体产品
FET 型: 2 个 N 沟道(双)
FET 特点: 逻辑电平门
漏极至源极电压(Vdss): 40V
电流 - 连续漏极(Id) @ 25° C: 8A
开态Rds(最大)@ Id, Vgs @ 25° C: 20 毫欧 @ 10.2A,10V
Id 时的 Vgs(th)(最大): 2.5V @ 250µA
闸电荷(Qg) @ Vgs: 55nC @ 10V
输入电容 (Ciss) @ Vds: 2165pF @ 20V
功率 - 最大: -
安装类型: 表面贴装
封装/外壳: PowerPAK? SO-8 双
供应商设备封装: PowerPAK? SO-8 Dual
包装: 带卷 (TR)