半导体模块 APTGT50H170TG品牌、价格、PDF参数

APTGT50H170TG • 品牌、价格
元器件型号 厂商 描述 数量 价格
APTGT50H170TG Microsemi Power Products Group IGBT MOD TRENCH FULL BRIDGE SP4 0 10:$124.95000
APTGF75DH120TG Microsemi Power Products Group IGBT MODULE NPT ASYM BRIDGE SP4 0 10:$85.36100
APTGF75DDA120TG Microsemi Power Products Group IGBT MODULE NPT BOOST CHOP SP4 0 10:$85.36100
APTGF150SK120TG Microsemi Power Products Group IGBT 1200V 200A 961W SP4 0 10:$82.67300
APTGV25H120BG Microsemi Power Products Group IGBT NPT BST CHOP FULL BRDG SP4 0 10:$81.93100
APTGT150DH60TG Microsemi Power Products Group IGBT MOD TRENCH ASYM BRIDGE SP4 0 10:$80.41700
APTGT100SK170TG Microsemi Power Products Group IGBT 1700V 150A 560W SP4 0 10:$80.01600
APTGT150SK120TG Microsemi Power Products Group IGBT 1200V 220A 690W SP4 0 10:$80.00000
APTGT50A170TG Microsemi Power Products Group IGBT MOD TRENCH PHASE LEG SP4 0 10:$78.30100
APTGF200U120DG Microsemi Power Products Group IGBT 1200V 275A 1136W SP6 0 10:$124.55300
APTCV40H60CT1G Microsemi Power Products Group IGBT TRENCH FULL BRIDGE SP1 0 11:$77.28636
APTGT50H170TG • PDF参数
类别: 半导体模块
IGBT 类型: 沟道和场截止
配置: 全桥反相器
电压 - 集电极发射极击穿(最大): 1700V
Vge, Ic时的最大Vce(开): 2.4V @ 15V,50A
电流 - 集电极 (Ic)(最大): 75A
电流 - 集电极截止(最大): 250µA
Vce 时的输入电容 (Cies): 4.4nF @ 25V
功率 - 最大: 312W
输入: 标准
NTC 热敏电阻:
安装类型: 底座安装
封装/外壳: SP4
供应商设备封装: SP4