半导体模块 APTGF25H120T3G品牌、价格、PDF参数

APTGF25H120T3G • 品牌、价格
元器件型号 厂商 描述 数量 价格
APTGF25H120T3G Microsemi Power Products Group IGBT MODULE NPT FULL BRIDGE SP3 0 15:$58.02600
APTGT100DDA60T3G Microsemi Power Products Group IGBT MOD TRENCH BOOST CHOP SP3 0 15:$58.52067
APTGT100DSK60T3G Microsemi Power Products Group IGBT MODULE DUAL BUCK CHOP SP3 0 15:$58.52067
APTGV75H60T3G Microsemi Power Products Group IGBT NPT BST CHOP FULL BRDG SP3 0 14:$60.48143
APTGT75H60T1G Microsemi Power Products Group POWER MOD IGBT FULL BRIDGE SP1 5 1:$61.88000
10:$58.24000
100:$51.87030
250:$49.14028
500:$47.32026
1,000:$45.50025
2,500:$44.59024
5,000:$43.68024
APTGT50DA120TG Microsemi Power Products Group IGBT 1200V 75A 277W SP4 0 13:$62.43923
APTGT35H120T1G Microsemi Power Products Group IGBT MOD TRENCH FULL BRIDGE SP1 0 14:$62.50857
APTGT35H120T3G Microsemi Power Products Group IGBT MOD TRENCH FULL BRIDGE SP3 0 14:$62.78857
APTGF25H120T3G • PDF参数
类别: 半导体模块
IGBT 类型: NPT
配置: 全桥反相器
电压 - 集电极发射极击穿(最大): 1200V
Vge, Ic时的最大Vce(开): 3.7V @ 15V,25A
电流 - 集电极 (Ic)(最大): 40A
电流 - 集电极截止(最大): 250µA
Vce 时的输入电容 (Cies): 1.65nF @ 25V
功率 - 最大: 208W
输入: 标准
NTC 热敏电阻:
安装类型: 底座安装
封装/外壳: SP3
供应商设备封装: SP3