分离式半导体产品 BSZ067N06LS3 G品牌、价格、PDF参数

BSZ067N06LS3 G • 品牌、价格
元器件型号 厂商 描述 数量 价格
BSZ067N06LS3 G Infineon Technologies MOSFET N-CH 60V 20A TSDSON-8 10,000 5,000:$0.47215
10,000:$0.45263
25,000:$0.44020
50,000:$0.42600
BSO203SP H Infineon Technologies MOSFET P-CH 20V 7A DSO-8 4,998 1:$1.28000
10:$1.14300
25:$1.00880
100:$0.90800
250:$0.79032
500:$0.70624
1,000:$0.55490
BSO203SP H Infineon Technologies MOSFET P-CH 20V 7A DSO-8 4,998 1:$1.28000
10:$1.14300
25:$1.00880
100:$0.90800
250:$0.79032
500:$0.70624
1,000:$0.55490
BSO203SP H Infineon Technologies MOSFET P-CH 20V 7A DSO-8 2,500 2,500:$0.47082
5,000:$0.44728
12,500:$0.42878
25,000:$0.41701
62,500:$0.40356
BSZ067N06LS3 G Infineon Technologies MOSFET N-CH 60V 20A TSDSON-8 14,359 1:$1.35000
10:$1.20700
25:$1.06520
100:$0.95850
250:$0.83424
500:$0.74550
1,000:$0.58575
2,500:$0.55025
BSZ067N06LS3 G • PDF参数
类别: 分离式半导体产品
FET 型: MOSFET N 通道,金属氧化物
FET 特点: 逻辑电平门
漏极至源极电压(Vdss): 60V
电流 - 连续漏极(Id) @ 25° C: 20A
开态Rds(最大)@ Id, Vgs @ 25° C: 6.7 毫欧 @ 20A,10V
Id 时的 Vgs(th)(最大): 2.2V @ 35µA
闸电荷(Qg) @ Vgs: 67nC @ 10V
输入电容 (Ciss) @ Vds: 5100pF @ 30V
功率 - 最大: 69W
安装类型: 表面贴装
封装/外壳: 8-PowerVDFN
供应商设备封装: PG-TSDSON-8(3.3x3.3)
包装: 带卷 (TR)