分离式半导体产品 DMP3105LVT-7品牌、价格、PDF参数

DMP3105LVT-7 • 品牌、价格
元器件型号 厂商 描述 数量 价格
DMP3105LVT-7 Diodes Inc MOSFET P-CH 30V 3.1A TSOT26 4,365 1:$0.47000
10:$0.33100
25:$0.27200
100:$0.21740
250:$0.15840
500:$0.12864
1,000:$0.09888
DMG2307L-7 Diodes Inc MOSFET P-CH 30V 2.5A SOT-23 16,300 1:$0.44000
10:$0.31100
25:$0.25520
100:$0.20390
250:$0.14852
500:$0.12060
1,000:$0.09270
DMG2307L-7 Diodes Inc MOSFET P-CH 30V 2.5A SOT-23 12,000 3,000:$0.08100
6,000:$0.07650
15,000:$0.06975
30,000:$0.06525
75,000:$0.05850
150,000:$0.05625
DMN65D8LFB-7B Diodes Inc MOSF N CH 60V 260MA X1-DFN1006-3 19,897 1:$0.49000
10:$0.34500
25:$0.28360
100:$0.22650
250:$0.16500
500:$0.13400
1,000:$0.10300
2,500:$0.09250
5,000:$0.08750
DMN65D8LFB-7B Diodes Inc MOSF N CH 60V 260MA X1-DFN1006-3 10,000 10,000:$0.07750
30,000:$0.07250
50,000:$0.06500
100,000:$0.06400
250,000:$0.06250
DMN62D0LFB-7B Diodes Inc MOSFET N-CH 60V 100MA 3-DFN 13,864 1:$0.49000
10:$0.34500
25:$0.28360
100:$0.22650
250:$0.16500
500:$0.13400
1,000:$0.10300
2,500:$0.09250
5,000:$0.08750
DMP3105LVT-7 • PDF参数
类别: 分离式半导体产品
FET 型: MOSFET P 通道,金属氧化物
FET 特点: 逻辑电平门
漏极至源极电压(Vdss): 30V
电流 - 连续漏极(Id) @ 25° C: 3.1A
开态Rds(最大)@ Id, Vgs @ 25° C: 75 毫欧 @ 4.2A,10V
Id 时的 Vgs(th)(最大): 1.5V @ 250µA
闸电荷(Qg) @ Vgs: 19.8nC @ 10V
输入电容 (Ciss) @ Vds: 839pF @ 15V
功率 - 最大: 1.15W
安装类型: 表面贴装
封装/外壳: SOT-23-6 细型,TSOT-23-6
供应商设备封装: TSOT-23-6
包装: 剪切带 (CT)