分离式半导体产品 DMN62D0SFD-7品牌、价格、PDF参数

DMN62D0SFD-7 • 品牌、价格
元器件型号 厂商 描述 数量 价格
DMN62D0SFD-7 Diodes Inc MOSFET N-CH 60V 540MA 3-DFN 3,000 1:$0.55000
10:$0.39400
25:$0.30640
100:$0.23210
250:$0.16404
500:$0.13132
1,000:$0.10073
DMG2307L-7 Diodes Inc MOSFET P-CH 30V 2.5A SOT-23 16,300 1:$0.44000
10:$0.31100
25:$0.25520
100:$0.20390
250:$0.14852
500:$0.12060
1,000:$0.09270
DMP58D0LFB-7B Diodes Inc MOSFET P-CH 50V 180MA 3-DFN 24,335 1:$0.49000
10:$0.34500
25:$0.28360
100:$0.22650
250:$0.16500
500:$0.13400
1,000:$0.10300
2,500:$0.09250
5,000:$0.08750
DMP58D0LFB-7B Diodes Inc MOSFET P-CH 50V 180MA 3-DFN 24,335 1:$0.49000
10:$0.34500
25:$0.28360
100:$0.22650
250:$0.16500
500:$0.13400
1,000:$0.10300
2,500:$0.09250
5,000:$0.08750
DMP58D0LFB-7B Diodes Inc MOSFET P-CH 50V 180MA 3-DFN 20,000 10,000:$0.07750
30,000:$0.07250
50,000:$0.06500
100,000:$0.06400
250,000:$0.06250
DMN62D0SFD-7 • PDF参数
类别: 分离式半导体产品
FET 型: MOSFET N 通道,金属氧化物
FET 特点: 逻辑电平门
漏极至源极电压(Vdss): 60V
电流 - 连续漏极(Id) @ 25° C: 540mA
开态Rds(最大)@ Id, Vgs @ 25° C: 2 欧姆 @ 500mA,10V
Id 时的 Vgs(th)(最大): 2.5V @ 1mA
闸电荷(Qg) @ Vgs: 0.87nC @ 10V
输入电容 (Ciss) @ Vds: 30.2pF @ 25V
功率 - 最大: 430mW
安装类型: 表面贴装
封装/外壳: 3-UDFN
供应商设备封装: 3-X1DFN1212
包装: 剪切带 (CT)