分离式半导体产品 BSS126 H6906品牌、价格、PDF参数

BSS126 H6906 • 品牌、价格
元器件型号 厂商 描述 数量 价格
BSS126 H6906 Infineon Technologies MOSFET N-CH 600V 21MA SOT23 3,000 3,000:$0.23026
6,000:$0.21438
15,000:$0.20644
30,000:$0.19850
75,000:$0.19532
150,000:$0.19056
BSC12DN20NS3 G Infineon Technologies MOSFET N-CH 200V 11.3A 8TDSON 15,294 1:$1.83000
10:$1.56700
25:$1.41040
100:$1.27960
250:$1.14908
500:$0.99238
1,000:$0.83568
2,500:$0.75734
BSC12DN20NS3 G Infineon Technologies MOSFET N-CH 200V 11.3A 8TDSON 10,000 5,000:$0.67899
10,000:$0.65288
25,000:$0.63982
50,000:$0.62676
BSO201SP H Infineon Technologies MOSFET P-CH 20V 12A 8SOIC 4,220 1:$1.87000
10:$1.60400
25:$1.44400
100:$1.31030
250:$1.17656
500:$1.01612
1,000:$0.85568
BSS126 H6906 • PDF参数
类别: 分离式半导体产品
FET 型: MOSFET N 通道,金属氧化物
FET 特点: 耗尽模式
漏极至源极电压(Vdss): 600V
电流 - 连续漏极(Id) @ 25° C: 21mA
开态Rds(最大)@ Id, Vgs @ 25° C: 500 欧姆 @ 16mA,10V
Id 时的 Vgs(th)(最大): 1.6V @ 8µA
闸电荷(Qg) @ Vgs: 2.1nC @ 5V
输入电容 (Ciss) @ Vds: 28pF @ 25V
功率 - 最大: 500mW
安装类型: 表面贴装
封装/外壳: TO-236-3,SC-59,SOT-23-3
供应商设备封装: PG-SOT23-3
包装: 带卷 (TR)