分离式半导体产品 STB21N65M5品牌、价格、PDF参数

STB21N65M5 • 品牌、价格
元器件型号 厂商 描述 数量 价格
STB21N65M5 STMicroelectronics MOSFET N-CH 650V 17A D2PAK 0 1,000:$2.79300
2,000:$2.65335
5,000:$2.55360
10,000:$2.47380
25,000:$2.39400
STW45N65M5 STMicroelectronics MOSF N CH 650V 35A TO247 434 1:$8.13000
10:$7.31300
25:$6.66240
100:$6.01250
250:$5.52500
500:$5.03750
1,000:$4.38750
2,500:$4.22500
5,000:$4.06250
STH260N6F6-2 STMicroelectronics MOSFET N-CH 75V 180A H2PAK 710 1:$6.91000
10:$6.19200
25:$5.56800
100:$5.06400
250:$4.58400
500:$4.10400
STB34NM60N STMicroelectronics MOSFET N-CH 600V 29A D2PAK 932 1:$8.00000
10:$7.19200
25:$6.54120
100:$5.92100
250:$5.42500
500:$4.96000
STH260N6F6-2 STMicroelectronics MOSFET N-CH 75V 180A H2PAK 710 1:$6.91000
10:$6.19200
25:$5.56800
100:$5.06400
250:$4.58400
500:$4.10400
STB34NM60N STMicroelectronics MOSFET N-CH 600V 29A D2PAK 0 1,000:$4.18500
2,000:$4.03000
5,000:$3.87500
10,000:$3.81300
25,000:$3.72000
STB21N65M5 • PDF参数
类别: 分离式半导体产品
FET 型: MOSFET N 通道,金属氧化物
FET 特点: 标准
漏极至源极电压(Vdss): 650V
电流 - 连续漏极(Id) @ 25° C: 17A
开态Rds(最大)@ Id, Vgs @ 25° C: 190 毫欧 @ 8.5A,10V
Id 时的 Vgs(th)(最大): 5V @ 250µA
闸电荷(Qg) @ Vgs: 50nC @ 10V
输入电容 (Ciss) @ Vds: 1950pF @ 100V
功率 - 最大: 125W
安装类型: 表面贴装
封装/外壳: TO-263-3,D²Pak(2 引线+接片),TO-263AB
供应商设备封装: D2PAK
包装: 带卷 (TR)