分离式半导体产品 BSS131 H6327品牌、价格、PDF参数

BSS131 H6327 • 品牌、价格
元器件型号 厂商 描述 数量 价格
BSS131 H6327 Infineon Technologies MOSFET N-CH 240V 110mA SOT23 6,000 3,000:$0.10620
6,000:$0.10030
15,000:$0.09145
30,000:$0.08555
75,000:$0.07670
150,000:$0.07375
BSS316N H6327 Infineon Technologies MOSFET N-CH 30V 1.4A SOT23 8,305 1:$0.62000
10:$0.44500
25:$0.35160
100:$0.26700
250:$0.18912
500:$0.15130
1,000:$0.11570
BSS316N H6327 Infineon Technologies MOSFET N-CH 30V 1.4A SOT23 6,000 3,000:$0.08900
6,000:$0.08010
15,000:$0.07120
30,000:$0.06675
75,000:$0.05919
150,000:$0.05563
BSS314PE H6327 Infineon Technologies MOSFET P-CH 30V 1.5A SOT23 5,960 1:$0.52000
10:$0.37000
25:$0.30560
100:$0.24650
250:$0.17748
500:$0.14298
1,000:$0.11093
BSS314PE H6327 Infineon Technologies MOSFET P-CH 30V 1.5A SOT23 5,960 1:$0.52000
10:$0.37000
25:$0.30560
100:$0.24650
250:$0.17748
500:$0.14298
1,000:$0.11093
BSS314PE H6327 Infineon Technologies MOSFET P-CH 30V 1.5A SOT23 3,000 3,000:$0.08874
6,000:$0.08381
15,000:$0.07642
30,000:$0.07149
75,000:$0.06409
150,000:$0.06163
BSS131 H6327 • PDF参数
类别: 分离式半导体产品
FET 型: MOSFET N 通道,金属氧化物
FET 特点: 逻辑电平门
漏极至源极电压(Vdss): 240V
电流 - 连续漏极(Id) @ 25° C: 110mA
开态Rds(最大)@ Id, Vgs @ 25° C: 14 欧姆 @ 100mA,10V
Id 时的 Vgs(th)(最大): 1.8V @ 56µA
闸电荷(Qg) @ Vgs: 3.1nC @ 10V
输入电容 (Ciss) @ Vds: 77pF @ 25V
功率 - 最大: 360mW
安装类型: 表面贴装
封装/外壳: TO-236-3,SC-59,SOT-23-3
供应商设备封装: PG-SOT23-3
包装: 带卷 (TR)