分离式半导体产品 IPB65R660CFD品牌、价格、PDF参数

IPB65R660CFD • 品牌、价格
元器件型号 厂商 描述 数量 价格
IPB65R660CFD Infineon Technologies MOSFET N-CH 650V 6.0A TO263 1,585 1:$3.39000
10:$2.90200
25:$2.61160
100:$2.36960
250:$2.12784
500:$1.83768
IPB65R660CFD Infineon Technologies MOSFET N-CH 650V 6.0A TO263 1,000 1,000:$1.40244
2,000:$1.30572
5,000:$1.25736
10,000:$1.20900
25,000:$1.18482
50,000:$1.16064
IPB036N12N3 G Infineon Technologies MOSFET N-CH 120V 180A TO263-7 2,204 1:$7.24000
10:$6.51500
25:$5.91160
100:$5.30840
250:$4.82580
500:$4.22258
IPB320N20N3 G Infineon Technologies MOSFET N-CH 200V 34A TO263-3 1,852 1:$3.33000
10:$3.00100
25:$2.72280
100:$2.44490
250:$2.22260
500:$1.94478
IPB320N20N3 G Infineon Technologies MOSFET N-CH 200V 34A TO263-3 1,852 1:$3.33000
10:$3.00100
25:$2.72280
100:$2.44490
250:$2.22260
500:$1.94478
IPB320N20N3 G Infineon Technologies MOSFET N-CH 200V 34A TO263-3 0 1,000:$1.55582
2,000:$1.47803
5,000:$1.41691
10,000:$1.37801
25,000:$1.33356
SPP80P06P H Infineon Technologies MOSFET P-CH 60V 80A TO-220 508 1:$3.30000
10:$2.95100
25:$2.65560
100:$2.41940
250:$2.18336
500:$1.95914
1,000:$1.65228
2,500:$1.56967
5,000:$1.50476
IPI65R420CFD Infineon Technologies MOSFET N-CH 650V 8.7A TO262 500 1:$3.30000
10:$2.94700
25:$2.65240
100:$2.41670
250:$2.18096
500:$1.95698
1,000:$1.65046
2,500:$1.56794
5,000:$1.50310
IPB65R660CFD • PDF参数
类别: 分离式半导体产品
FET 型: MOSFET N 通道,金属氧化物
FET 特点: 标准
漏极至源极电压(Vdss): 650V
电流 - 连续漏极(Id) @ 25° C: 6A
开态Rds(最大)@ Id, Vgs @ 25° C: 660 毫欧 @ 2.1A,10V
Id 时的 Vgs(th)(最大): 4.5V @ 200µA
闸电荷(Qg) @ Vgs: 22nC @ 10V
输入电容 (Ciss) @ Vds: 615pF @ 100V
功率 - 最大: 62.5W
安装类型: 表面贴装
封装/外壳: TO-263-3,D²Pak(2 引线+接片),TO-263AB
供应商设备封装: PG-TO263
包装: 剪切带 (CT)