分离式半导体产品 SI7619DN-T1-GE3品牌、价格、PDF参数

SI7619DN-T1-GE3 • 品牌、价格
元器件型号 厂商 描述 数量 价格
SI7619DN-T1-GE3 Vishay Siliconix MOSFET P-CH 30V 1212-8 PPAK 3,953 1:$0.92000
25:$0.71400
100:$0.63000
250:$0.54600
500:$0.46200
1,000:$0.36750
SIS406DN-T1-GE3 Vishay Siliconix MOSFET N-CH D-S 30V 1212-8 PPAK 6,176 1:$0.90000
25:$0.69720
100:$0.61500
250:$0.53300
500:$0.45100
1,000:$0.35875
SIS406DN-T1-GE3 Vishay Siliconix MOSFET N-CH D-S 30V 1212-8 PPAK 6,176 1:$0.90000
25:$0.69720
100:$0.61500
250:$0.53300
500:$0.45100
1,000:$0.35875
SIS406DN-T1-GE3 Vishay Siliconix MOSFET N-CH D-S 30V 1212-8 PPAK 3,000 3,000:$0.29725
6,000:$0.27675
15,000:$0.26650
30,000:$0.25625
75,000:$0.25215
150,000:$0.24600
SI4487DY-T1-GE3 Vishay Siliconix MOSFET P-CH 30V 8-SOIC 4,529 1:$0.88000
25:$0.68000
100:$0.60000
250:$0.52000
500:$0.44000
1,000:$0.35000
SI7619DN-T1-GE3 • PDF参数
类别: 分离式半导体产品
FET 型: MOSFET P 通道,金属氧化物
FET 特点: 标准
漏极至源极电压(Vdss): 30V
电流 - 连续漏极(Id) @ 25° C: 24A
开态Rds(最大)@ Id, Vgs @ 25° C: 21 毫欧 @ 10.5A,10V
Id 时的 Vgs(th)(最大): 3V @ 250µA
闸电荷(Qg) @ Vgs: 50nC @ 10V
输入电容 (Ciss) @ Vds: 1350pF @ 15V
功率 - 最大: 27.8W
安装类型: 表面贴装
封装/外壳: PowerPAK? 1212-8
供应商设备封装: PowerPAK? 1212-8
包装: 剪切带 (CT)