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分离式半导体产品 SI8499DB-T2-E1品牌、价格、PDF参数

SI8499DB-T2-E1 • 品牌、价格
元器件型号 厂商 描述 数量 价格
SI8499DB-T2-E1 Vishay Siliconix MOSFET P-CH D-S 20V MICROFOOT 12,340 1:$0.82000
25:$0.57360
100:$0.49170
250:$0.42464
500:$0.36506
1,000:$0.28310
SI8499DB-T2-E1 Vishay Siliconix MOSFET P-CH D-S 20V MICROFOOT 12,000 3,000:$0.23095
6,000:$0.21605
15,000:$0.20115
30,000:$0.18998
75,000:$0.18625
150,000:$0.17880
SI8467DB-T2-E1 Vishay Siliconix MOSFET P-CH 20V MICROFOOT 4,402 1:$0.66000
25:$0.51000
100:$0.45000
250:$0.39000
500:$0.33000
1,000:$0.26250
SI8467DB-T2-E1 Vishay Siliconix MOSFET P-CH 20V MICROFOOT 3,000 3,000:$0.21750
6,000:$0.20250
15,000:$0.19500
30,000:$0.18750
75,000:$0.18450
150,000:$0.18000
SI5458DU-T1-GE3 Vishay Siliconix MOSFET N-CH D-S 30V PPAK CHIPFET 3,000 3,000:$0.21750
6,000:$0.20250
15,000:$0.19500
30,000:$0.18750
75,000:$0.18450
150,000:$0.18000
SI2334DS-T1-GE3 Vishay Siliconix MOSFET N-CH 30V SOT-23 4,827 1:$0.74000
25:$0.51960
100:$0.44550
250:$0.38476
500:$0.33076
1,000:$0.25650
SI2334DS-T1-GE3 Vishay Siliconix MOSFET N-CH 30V SOT-23 3,000 3,000:$0.20925
6,000:$0.19575
15,000:$0.18225
30,000:$0.17213
75,000:$0.16875
150,000:$0.16200
SI5419DU-T1-GE3 Vishay Siliconix MOSFET P-CH D-S 30V PPAK CHIPFET 7,368 1:$0.74000
25:$0.51960
100:$0.44550
250:$0.38476
500:$0.33076
1,000:$0.25650
SI5419DU-T1-GE3 Vishay Siliconix MOSFET P-CH D-S 30V PPAK CHIPFET 6,000 3,000:$0.20925
6,000:$0.19575
15,000:$0.18225
30,000:$0.17213
75,000:$0.16875
150,000:$0.16200
SQ1470EH-T1-GE3 Vishay Siliconix MOSFET N-CH 30V 2.8A SC70 5,420 1:$0.66000
25:$0.46200
100:$0.39600
250:$0.34200
500:$0.29400
1,000:$0.22800
SQ1470EH-T1-GE3 Vishay Siliconix MOSFET N-CH 30V 2.8A SC70 5,420 1:$0.66000
25:$0.46200
100:$0.39600
250:$0.34200
500:$0.29400
1,000:$0.22800
SQ1470EH-T1-GE3 Vishay Siliconix MOSFET N-CH 30V 2.8A SC70 3,000 3,000:$0.18600
6,000:$0.17400
15,000:$0.16200
30,000:$0.15300
75,000:$0.15000
150,000:$0.14400
SIA425EDJ-T1-GE3 Vishay Siliconix MOSFET P-CH 20V SC-70-6 3,000 3,000:$0.17050
6,000:$0.15950
15,000:$0.14850
30,000:$0.14025
75,000:$0.13750
150,000:$0.13200
SI8499DB-T2-E1 • PDF参数
类别: 分离式半导体产品
FET 型: MOSFET P 通道，金属氧化物
FET 特点: 标准
漏极至源极电压(Vdss): 20V
电流 - 连续漏极(Id) @ 25° C: 16A
开态Rds（最大）@ Id, Vgs @ 25° C: 32 毫欧 @ 1.5A，4.5V
Id 时的 Vgs(th)（最大）: 1.3V @ 250µA
闸电荷(Qg) @ Vgs: 30nC @ 5V
输入电容 (Ciss) @ Vds: 1300pF @ 10V
功率 - 最大: 13W
安装类型: 表面贴装
封装/外壳: 6-MICRO FOOT?
供应商设备封装: 6-Micro Foot?
包装: 剪切带 (CT)
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