分离式半导体产品 SI2334DS-T1-GE3品牌、价格、PDF参数

SI2334DS-T1-GE3 • 品牌、价格
元器件型号 厂商 描述 数量 价格
SI2334DS-T1-GE3 Vishay Siliconix MOSFET N-CH 30V SOT-23 4,827 1:$0.74000
25:$0.51960
100:$0.44550
250:$0.38476
500:$0.33076
1,000:$0.25650
SI2334DS-T1-GE3 Vishay Siliconix MOSFET N-CH 30V SOT-23 3,000 3,000:$0.20925
6,000:$0.19575
15,000:$0.18225
30,000:$0.17213
75,000:$0.16875
150,000:$0.16200
SI5419DU-T1-GE3 Vishay Siliconix MOSFET P-CH D-S 30V PPAK CHIPFET 7,368 1:$0.74000
25:$0.51960
100:$0.44550
250:$0.38476
500:$0.33076
1,000:$0.25650
SI5419DU-T1-GE3 Vishay Siliconix MOSFET P-CH D-S 30V PPAK CHIPFET 6,000 3,000:$0.20925
6,000:$0.19575
15,000:$0.18225
30,000:$0.17213
75,000:$0.16875
150,000:$0.16200
SQ1470EH-T1-GE3 Vishay Siliconix MOSFET N-CH 30V 2.8A SC70 5,420 1:$0.66000
25:$0.46200
100:$0.39600
250:$0.34200
500:$0.29400
1,000:$0.22800
SQ1470EH-T1-GE3 Vishay Siliconix MOSFET N-CH 30V 2.8A SC70 5,420 1:$0.66000
25:$0.46200
100:$0.39600
250:$0.34200
500:$0.29400
1,000:$0.22800
SQ1470EH-T1-GE3 Vishay Siliconix MOSFET N-CH 30V 2.8A SC70 3,000 3,000:$0.18600
6,000:$0.17400
15,000:$0.16200
30,000:$0.15300
75,000:$0.15000
150,000:$0.14400
SIA425EDJ-T1-GE3 Vishay Siliconix MOSFET P-CH 20V SC-70-6 3,000 3,000:$0.17050
6,000:$0.15950
15,000:$0.14850
30,000:$0.14025
75,000:$0.13750
150,000:$0.13200
SI2334DS-T1-GE3 • PDF参数
类别: 分离式半导体产品
FET 型: MOSFET N 通道,金属氧化物
FET 特点: 逻辑电平门
漏极至源极电压(Vdss): 30V
电流 - 连续漏极(Id) @ 25° C: 4.9A
开态Rds(最大)@ Id, Vgs @ 25° C: 44 毫欧 @ 4.2A,4.5V
Id 时的 Vgs(th)(最大): 1V @ 250µA
闸电荷(Qg) @ Vgs: 10nC @ 4.5V
输入电容 (Ciss) @ Vds: 634pF @ 15V
功率 - 最大: 1.7W
安装类型: 表面贴装
封装/外壳: TO-236-3,SC-59,SOT-23-3
供应商设备封装: SOT-23-3(TO-236)
包装: 剪切带 (CT)