分离式半导体产品 SI4446DY-T1-GE3品牌、价格、PDF参数

SI4446DY-T1-GE3 • 品牌、价格
元器件型号 厂商 描述 数量 价格
SI4446DY-T1-GE3 Vishay Siliconix MOSFET N-CH D-S 40V 8-SOIC 0 2,500:$0.26100
5,000:$0.24300
12,500:$0.23400
25,000:$0.22500
62,500:$0.22140
125,000:$0.21600
SI4447DY-T1-GE3 Vishay Siliconix MOSFET P-CH D-S 40V 8-SOIC 565 1:$0.79000
25:$0.61200
100:$0.54000
250:$0.46800
500:$0.39600
1,000:$0.31500
SI4447DY-T1-GE3 Vishay Siliconix MOSFET P-CH D-S 40V 8-SOIC 565 1:$0.79000
25:$0.61200
100:$0.54000
250:$0.46800
500:$0.39600
1,000:$0.31500
SI4447DY-T1-GE3 Vishay Siliconix MOSFET P-CH D-S 40V 8-SOIC 0 2,500:$0.26100
5,000:$0.24300
12,500:$0.23400
25,000:$0.22500
62,500:$0.22140
125,000:$0.21600
SI4829DY-T1-GE3 Vishay Siliconix MOSFET P-CH D-S 20V 8-SOIC 565 1:$0.75000
25:$0.52360
100:$0.44880
250:$0.38760
500:$0.33320
1,000:$0.25840
SI4829DY-T1-GE3 Vishay Siliconix MOSFET P-CH D-S 20V 8-SOIC 565 1:$0.75000
25:$0.52360
100:$0.44880
250:$0.38760
500:$0.33320
1,000:$0.25840
SI4829DY-T1-GE3 Vishay Siliconix MOSFET P-CH D-S 20V 8-SOIC 0 2,500:$0.21080
5,000:$0.19720
12,500:$0.18360
25,000:$0.17340
62,500:$0.17000
125,000:$0.16320
SI1467DH-T1-GE3 Vishay Siliconix MOSFET P-CH 20V SC-70-6 688 1:$0.75000
25:$0.57800
100:$0.51000
250:$0.44200
500:$0.37400
1,000:$0.29750
SI4446DY-T1-GE3 • PDF参数
类别: 分离式半导体产品
FET 型: MOSFET N 通道,金属氧化物
FET 特点: 逻辑电平门
漏极至源极电压(Vdss): 40V
电流 - 连续漏极(Id) @ 25° C: 3.9A
开态Rds(最大)@ Id, Vgs @ 25° C: 40 毫欧 @ 5.2A,10V
Id 时的 Vgs(th)(最大): 1.6V @ 250µA
闸电荷(Qg) @ Vgs: 12nC @ 4.5V
输入电容 (Ciss) @ Vds: 700pF @ 20V
功率 - 最大: 1.1W
安装类型: 表面贴装
封装/外壳: 8-SOIC(0.154",3.90mm 宽)
供应商设备封装: 8-SOICN
包装: 带卷 (TR)