分离式半导体产品 SI1302DL-T1-GE3品牌、价格、PDF参数

SI1302DL-T1-GE3 • 品牌、价格
元器件型号 厂商 描述 数量 价格
SI1302DL-T1-GE3 Vishay Siliconix MOSFET N-CH D-S 30V SC-70-3 633 1:$0.52000
25:$0.36560
100:$0.31350
250:$0.27076
500:$0.23276
1,000:$0.18050
SI7143DP-T1-GE3 Vishay Siliconix MOSFET P-CH 30V 8-SOIC 5,066 1:$1.52000
25:$1.20000
100:$1.08000
250:$0.94000
500:$0.84000
1,000:$0.66000
SI1302DL-T1-GE3 Vishay Siliconix MOSFET N-CH D-S 30V SC-70-3 0 3,000:$0.14725
6,000:$0.13775
15,000:$0.12825
30,000:$0.12113
75,000:$0.11875
150,000:$0.11400
SI7143DP-T1-GE3 Vishay Siliconix MOSFET P-CH 30V 8-SOIC 5,066 1:$1.52000
25:$1.20000
100:$1.08000
250:$0.94000
500:$0.84000
1,000:$0.66000
SI7143DP-T1-GE3 Vishay Siliconix MOSFET P-CH 30V 8-SOIC 3,000 3,000:$0.56000
6,000:$0.53200
15,000:$0.51000
30,000:$0.49600
75,000:$0.48000
SI1302DL-T1-GE3 • PDF参数
类别: 分离式半导体产品
FET 型: MOSFET N 通道,金属氧化物
FET 特点: 逻辑电平门
漏极至源极电压(Vdss): 30V
电流 - 连续漏极(Id) @ 25° C: 600mA
开态Rds(最大)@ Id, Vgs @ 25° C: 480 毫欧 @ 600mA,10V
Id 时的 Vgs(th)(最大): 3V @ 250µA
闸电荷(Qg) @ Vgs: 1.4nC @ 10V
输入电容 (Ciss) @ Vds: -
功率 - 最大: 280mW
安装类型: 表面贴装
封装/外壳: SC-70,SOT-323
供应商设备封装: SC-70-3
包装: 剪切带 (CT)