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分离式半导体产品 SI3440DV-T1-GE3品牌、价格、PDF参数

SI3440DV-T1-GE3 • 品牌、价格
元器件型号 厂商 描述 数量 价格
SI3440DV-T1-GE3 Vishay Siliconix MOSFET N-CH D-S 150V 6-TSOP 0 3,000:$0.57467
SIA406DJ-T1-GE3 Vishay Siliconix MOSFET N-CH D-S 12V SC-70-6 0 3,000:$0.15500
6,000:$0.14500
15,000:$0.13500
30,000:$0.12750
75,000:$0.12500
150,000:$0.12000
SI8465DB-T2-E1 Vishay Siliconix MOSFET P-CH D-S 20V MICROFOOT 730 1:$0.55000
25:$0.38520
100:$0.33000
250:$0.28500
500:$0.24500
1,000:$0.19000
SI8465DB-T2-E1 Vishay Siliconix MOSFET P-CH D-S 20V MICROFOOT 730 1:$0.55000
25:$0.38520
100:$0.33000
250:$0.28500
500:$0.24500
1,000:$0.19000
SIR802DP-T1-GE3 Vishay Siliconix MOSFET N-CH D-S 20V 8-SOIC 1,381 1:$1.56000
25:$1.23000
100:$1.10700
250:$0.96352
500:$0.86100
1,000:$0.67650
SIR802DP-T1-GE3 Vishay Siliconix MOSFET N-CH D-S 20V 8-SOIC 1,381 1:$1.56000
25:$1.23000
100:$1.10700
250:$0.96352
500:$0.86100
1,000:$0.67650
SIR802DP-T1-GE3 Vishay Siliconix MOSFET N-CH D-S 20V 8-SOIC 0 3,000:$0.57400
6,000:$0.54530
15,000:$0.52275
30,000:$0.50840
75,000:$0.49200
SI8465DB-T2-E1 Vishay Siliconix MOSFET P-CH D-S 20V MICROFOOT 0 3,000:$0.15500
6,000:$0.14500
15,000:$0.13500
30,000:$0.12750
75,000:$0.12500
150,000:$0.12000
SI1302DL-T1-GE3 Vishay Siliconix MOSFET N-CH D-S 30V SC-70-3 633 1:$0.52000
25:$0.36560
100:$0.31350
250:$0.27076
500:$0.23276
1,000:$0.18050
SI1302DL-T1-GE3 Vishay Siliconix MOSFET N-CH D-S 30V SC-70-3 633 1:$0.52000
25:$0.36560
100:$0.31350
250:$0.27076
500:$0.23276
1,000:$0.18050
SI7143DP-T1-GE3 Vishay Siliconix MOSFET P-CH 30V 8-SOIC 5,066 1:$1.52000
25:$1.20000
100:$1.08000
250:$0.94000
500:$0.84000
1,000:$0.66000
SI1302DL-T1-GE3 Vishay Siliconix MOSFET N-CH D-S 30V SC-70-3 0 3,000:$0.14725
6,000:$0.13775
15,000:$0.12825
30,000:$0.12113
75,000:$0.11875
150,000:$0.11400
SI7143DP-T1-GE3 Vishay Siliconix MOSFET P-CH 30V 8-SOIC 5,066 1:$1.52000
25:$1.20000
100:$1.08000
250:$0.94000
500:$0.84000
1,000:$0.66000
SI7143DP-T1-GE3 Vishay Siliconix MOSFET P-CH 30V 8-SOIC 3,000 3,000:$0.56000
6,000:$0.53200
15,000:$0.51000
30,000:$0.49600
75,000:$0.48000
SI3440DV-T1-GE3 • PDF参数
类别: 分离式半导体产品
FET 型: MOSFET N 通道，金属氧化物
FET 特点: 逻辑电平门
漏极至源极电压(Vdss): 150V
电流 - 连续漏极(Id) @ 25° C: 1.2A
开态Rds（最大）@ Id, Vgs @ 25° C: 375 毫欧 @ 1.5A，10V
Id 时的 Vgs(th)（最大）: 4V @ 250µA
闸电荷(Qg) @ Vgs: 8nC @ 10V
输入电容 (Ciss) @ Vds: -
功率 - 最大: 1.14W
安装类型: 表面贴装
封装/外壳: 6-TSOP（0.065"，1.65mm 宽）
供应商设备封装: 6-TSOP
包装: 带卷 (TR)
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