分离式半导体产品 DMN2015UFDE-7品牌、价格、PDF参数

DMN2015UFDE-7 • 品牌、价格
元器件型号 厂商 描述 数量 价格
DMN2015UFDE-7 Diodes Inc MOSF N CH 20V 10.5A U-DFN2020-6E 5,960 1:$0.64000
10:$0.53600
25:$0.46920
100:$0.40170
250:$0.34840
500:$0.29510
1,000:$0.22750
DMN2013UFDE-7 Diodes Inc MOSF N CH 20V 10.5A U-DFN2020-6 5,765 1:$0.64000
10:$0.53600
25:$0.46920
100:$0.40170
250:$0.34840
500:$0.29510
1,000:$0.22750
DMN2013UFDE-7 Diodes Inc MOSF N CH 20V 10.5A U-DFN2020-6 5,765 1:$0.64000
10:$0.53600
25:$0.46920
100:$0.40170
250:$0.34840
500:$0.29510
1,000:$0.22750
DMN2013UFDE-7 Diodes Inc MOSF N CH 20V 10.5A U-DFN2020-6 3,000 3,000:$0.20150
6,000:$0.18850
15,000:$0.17550
30,000:$0.16640
75,000:$0.16250
150,000:$0.15600
DMN2015UFDE-7 • PDF参数
类别: 分离式半导体产品
FET 型: MOSFET N 通道,金属氧化物
FET 特点: 逻辑电平门
漏极至源极电压(Vdss): 20V
电流 - 连续漏极(Id) @ 25° C: 10.5A
开态Rds(最大)@ Id, Vgs @ 25° C: 11.6 毫欧 @ 8.5A,4.5V
Id 时的 Vgs(th)(最大): 1.1V @ 250µA
闸电荷(Qg) @ Vgs: 45.6nC @ 10V
输入电容 (Ciss) @ Vds: 1779pF @ 10V
功率 - 最大: 660mW
安装类型: 表面贴装
封装/外壳: 6-UDFN
供应商设备封装: *
包装: 剪切带 (CT)