分离式半导体产品 PHB66NQ03LT,118品牌、价格、PDF参数

PHB66NQ03LT,118 • 品牌、价格
元器件型号 厂商 描述 数量 价格
PHB66NQ03LT,118 NXP Semiconductors MOSFET N-CH 25V 66A SOT404 3,416 1:$1.35000
10:$1.19600
25:$1.08000
100:$0.94500
250:$0.82876
PSMN069-100YS,115 NXP Semiconductors MOSFET N-CH LFPAK 2,684 1:$0.66000
10:$0.58200
25:$0.51440
100:$0.44840
250:$0.39036
500:$0.33228
PSMN069-100YS,115 NXP Semiconductors MOSFET N-CH LFPAK 0 1,500:$0.25808
3,000:$0.23389
7,500:$0.21775
10,500:$0.20969
37,500:$0.20163
75,000:$0.19840
150,000:$0.19356
PMK50XP,518 NXP Semiconductors MOSFET P-CH FET 20V 7.9A 8-SOIC 10,000 1:$0.66000
10:$0.57800
25:$0.51040
100:$0.44480
250:$0.38720
500:$0.32960
1,000:$0.26400
PMK50XP,518 NXP Semiconductors MOSFET P-CH FET 20V 7.9A 8-SOIC 10,000 1:$0.66000
10:$0.57800
25:$0.51040
100:$0.44480
250:$0.38720
500:$0.32960
1,000:$0.26400
PHB66NQ03LT,118 • PDF参数
类别: 分离式半导体产品
FET 型: MOSFET N 通道,金属氧化物
FET 特点: 逻辑电平门
漏极至源极电压(Vdss): 25V
电流 - 连续漏极(Id) @ 25° C: 66A
开态Rds(最大)@ Id, Vgs @ 25° C: 10.5 毫欧 @ 25A,10V
Id 时的 Vgs(th)(最大): 2V @ 1mA
闸电荷(Qg) @ Vgs: 12nC @ 5V
输入电容 (Ciss) @ Vds: 860pF @ 25V
功率 - 最大: 93W
安装类型: 表面贴装
封装/外壳: TO-263-3,D²Pak(2 引线+接片),TO-263AB
供应商设备封装: D2PAK
包装: 剪切带 (CT)