PSMN069-100YS,115 • 品牌、价格
| 元器件型号 |
厂商 |
描述 |
数量 |
价格 |
| PSMN069-100YS,115 |
NXP Semiconductors |
MOSFET N-CH LFPAK |
2,684 |
1:$0.66000
10:$0.58200
25:$0.51440
100:$0.44840
250:$0.39036
500:$0.33228
|
| PSMN069-100YS,115 |
NXP Semiconductors |
MOSFET N-CH LFPAK |
0 |
1,500:$0.25808
3,000:$0.23389
7,500:$0.21775
10,500:$0.20969
37,500:$0.20163
75,000:$0.19840
150,000:$0.19356
|
| PMK50XP,518 |
NXP Semiconductors |
MOSFET P-CH FET 20V 7.9A 8-SOIC |
10,000 |
1:$0.66000
10:$0.57800
25:$0.51040
100:$0.44480
250:$0.38720
500:$0.32960
1,000:$0.26400
|
| PMK50XP,518 |
NXP Semiconductors |
MOSFET P-CH FET 20V 7.9A 8-SOIC |
10,000 |
1:$0.66000
10:$0.57800
25:$0.51040
100:$0.44480
250:$0.38720
500:$0.32960
1,000:$0.26400
|
PSMN069-100YS,115 • PDF参数
| 类别: |
分离式半导体产品
|
| FET 型: |
MOSFET N 通道，金属氧化物
|
| FET 特点: |
标准
|
| 漏极至源极电压(Vdss): |
100V
|
| 电流 - 连续漏极(Id) @ 25° C: |
17A
|
| 开态Rds（最大）@ Id, Vgs @ 25° C: |
72.4 毫欧 @ 5A，10V
|
| Id 时的 Vgs(th)（最大）: |
4V @ 1mA
|
| 闸电荷(Qg) @ Vgs: |
14nC @ 10V
|
| 输入电容 (Ciss) @ Vds: |
645pF @ 50V
|
| 功率 - 最大: |
56W
|
| 安装类型: |
表面贴装
|
| 封装/外壳: |
SC-100，SOT-669，4-LFPAK
|
| 供应商设备封装: |
LFPAK，Power-SO8
|
| 包装: |
剪切带 (CT)
|