分离式半导体产品 PSMN1R3-30YL,115品牌、价格、PDF参数

PSMN1R3-30YL,115 • 品牌、价格
元器件型号 厂商 描述 数量 价格
PSMN1R3-30YL,115 NXP Semiconductors MOSFET N-CH 30V 100A LFPAK 7,193 1:$1.52000
10:$1.34000
25:$1.20960
100:$1.05840
250:$0.92820
500:$0.82320
PSMN1R3-30YL,115 NXP Semiconductors MOSFET N-CH 30V 100A LFPAK 6,000 1,500:$0.63000
3,000:$0.58800
7,500:$0.55860
10,500:$0.53760
37,500:$0.52080
75,000:$0.50400
BUK6607-55C,118 NXP Semiconductors MOSFET N-CH TRENCH D2PACK 4,323 1:$1.64000
10:$1.47700
25:$1.32320
100:$1.18970
250:$1.05636
BUK664R6-40C,118 NXP Semiconductors MOSFET N-CH TRENCH D2PACK 4,794 1:$1.64000
10:$1.47700
25:$1.32320
100:$1.18970
250:$1.05636
BUK664R6-40C,118 NXP Semiconductors MOSFET N-CH TRENCH D2PACK 4,794 1:$1.64000
10:$1.47700
25:$1.32320
100:$1.18970
250:$1.05636
BUK663R5-30C,118 NXP Semiconductors MOSFET N-CH TRENCH D2PACK 4,787 1:$1.64000
10:$1.47700
25:$1.32320
100:$1.18970
250:$1.05636
PSMN1R3-30YL,115 • PDF参数
类别: 分离式半导体产品
FET 型: MOSFET N 通道,金属氧化物
FET 特点: 逻辑电平门
漏极至源极电压(Vdss): 30V
电流 - 连续漏极(Id) @ 25° C: 100A
开态Rds(最大)@ Id, Vgs @ 25° C: 1.3 毫欧 @ 15A,10V
Id 时的 Vgs(th)(最大): 2.15V @ 1mA
闸电荷(Qg) @ Vgs: 100nC @ 10V
输入电容 (Ciss) @ Vds: 6227pF @ 12V
功率 - 最大: 121W
安装类型: 表面贴装
封装/外壳: SOT1023,4-LFPAK
供应商设备封装: LFPAK,Power-SO8
包装: Digi-Reel®