分离式半导体产品 PSMN013-30LL,115品牌、价格、PDF参数

PSMN013-30LL,115 • 品牌、价格
元器件型号 厂商 描述 数量 价格
PSMN013-30LL,115 NXP Semiconductors MOSFET N-CH 30V QFN3333 1,386 1:$0.85000
10:$0.74400
25:$0.65760
100:$0.57300
250:$0.49876
500:$0.42456
PSMN039-100YS,115 NXP Semiconductors MOSFET N-CH LFPAK 1,500 1,500:$0.29679
PSMN039-100YS,115 NXP Semiconductors MOSFET N-CH LFPAK 1,658 1:$0.85000
10:$0.74400
25:$0.65760
100:$0.57300
250:$0.49876
500:$0.42456
PSMN6R0-30YL,115 NXP Semiconductors MOSFET N-CH 30V 79A LFPAK 1,500 1,500:$0.27101
PSMN6R0-30YL,115 NXP Semiconductors MOSFET N-CH 30V 79A LFPAK 2,654 1:$0.78000
10:$0.67900
25:$0.60040
100:$0.52320
250:$0.45544
500:$0.38770
PSMN5R0-30YL,115 NXP Semiconductors MOSFET N-CH 30V 91A LFPAK 1,500 1,500:$0.27101
PSMN5R0-30YL,115 NXP Semiconductors MOSFET N-CH 30V 91A LFPAK 5,639 1:$0.78000
10:$0.67900
25:$0.60040
100:$0.52320
250:$0.45544
500:$0.38770
PSMN5R0-30YL,115 NXP Semiconductors MOSFET N-CH 30V 91A LFPAK 5,639 1:$0.78000
10:$0.67900
25:$0.60040
100:$0.52320
250:$0.45544
500:$0.38770
PSMN013-30LL,115 • PDF参数
类别: 分离式半导体产品
FET 型: MOSFET N 通道,金属氧化物
FET 特点: 逻辑电平门
漏极至源极电压(Vdss): 30V
电流 - 连续漏极(Id) @ 25° C: 21A
开态Rds(最大)@ Id, Vgs @ 25° C: 13 毫欧 @ 5A,10V
Id 时的 Vgs(th)(最大): 2.15V @ 1mA
闸电荷(Qg) @ Vgs: 12.2nC @ 10V
输入电容 (Ciss) @ Vds: 768pF @ 15V
功率 - 最大: 41W
安装类型: 表面贴装
封装/外壳: 8-VDFN 裸露焊盘
供应商设备封装: 8-QFN(3.3x3.3)
包装: Digi-Reel®