PSMN039-100YS,115 • 品牌、价格
| 元器件型号 |
厂商 |
描述 |
数量 |
价格 |
| PSMN039-100YS,115 |
NXP Semiconductors |
MOSFET N-CH LFPAK |
1,500 |
1,500:$0.29679
|
| PSMN039-100YS,115 |
NXP Semiconductors |
MOSFET N-CH LFPAK |
1,658 |
1:$0.85000
10:$0.74400
25:$0.65760
100:$0.57300
250:$0.49876
500:$0.42456
|
| PSMN6R0-30YL,115 |
NXP Semiconductors |
MOSFET N-CH 30V 79A LFPAK |
1,500 |
1,500:$0.27101
|
| PSMN6R0-30YL,115 |
NXP Semiconductors |
MOSFET N-CH 30V 79A LFPAK |
2,654 |
1:$0.78000
10:$0.67900
25:$0.60040
100:$0.52320
250:$0.45544
500:$0.38770
|
| PSMN5R0-30YL,115 |
NXP Semiconductors |
MOSFET N-CH 30V 91A LFPAK |
1,500 |
1,500:$0.27101
|
| PSMN5R0-30YL,115 |
NXP Semiconductors |
MOSFET N-CH 30V 91A LFPAK |
5,639 |
1:$0.78000
10:$0.67900
25:$0.60040
100:$0.52320
250:$0.45544
500:$0.38770
|
| PSMN5R0-30YL,115 |
NXP Semiconductors |
MOSFET N-CH 30V 91A LFPAK |
5,639 |
1:$0.78000
10:$0.67900
25:$0.60040
100:$0.52320
250:$0.45544
500:$0.38770
|
PSMN039-100YS,115 • PDF参数
| 类别: |
分离式半导体产品
|
| FET 型: |
MOSFET N 通道，金属氧化物
|
| FET 特点: |
标准
|
| 漏极至源极电压(Vdss): |
100V
|
| 电流 - 连续漏极(Id) @ 25° C: |
28.1A
|
| 开态Rds（最大）@ Id, Vgs @ 25° C: |
39.5 毫欧 @ 15A，10V
|
| Id 时的 Vgs(th)（最大）: |
4V @ 1mA
|
| 闸电荷(Qg) @ Vgs: |
23nC @ 10V
|
| 输入电容 (Ciss) @ Vds: |
1847pF @ 50V
|
| 功率 - 最大: |
74W
|
| 安装类型: |
表面贴装
|
| 封装/外壳: |
SC-100，SOT-669，4-LFPAK
|
| 供应商设备封装: |
LFPAK，Power-SO8
|
| 包装: |
带卷 (TR)
|