PSMN039-100YS,115 品牌、价格
元器件型号 |
厂商 |
描述 |
数量 |
价格 |
PSMN039-100YS,115 |
NXP Semiconductors |
MOSFET N-CH LFPAK |
1,658 |
1:$0.85000
10:$0.74400
25:$0.65760
100:$0.57300
250:$0.49876
500:$0.42456
|
PSMN039-100YS,115 |
NXP Semiconductors |
MOSFET N-CH LFPAK |
0 |
1,500:$0.32976
3,000:$0.29885
7,500:$0.27823
10,500:$0.26793
37,500:$0.25763
75,000:$0.25350
150,000:$0.24732
|
PSMN5R0-30YL,115 |
NXP Semiconductors |
MOSFET N-CH 30V 91A LFPAK |
4,500 |
1,500:$0.30112
3,000:$0.27289
7,500:$0.25407
10,500:$0.24466
37,500:$0.23525
75,000:$0.23149
150,000:$0.22584
|
BSP110,115 |
NXP Semiconductors |
MOSFET N-CH 100V 520MA SOT223 |
5,705 |
1:$0.75000
10:$0.66100
25:$0.58400
100:$0.50900
250:$0.44312
500:$0.37718
|
PHT4NQ10T,135 |
NXP Semiconductors |
MOSFET N-CH 100V 3.5A SOT223 |
8,883 |
1:$0.81000
10:$0.70800
25:$0.62560
100:$0.54520
250:$0.47456
500:$0.40396
1,000:$0.32357
|
PHT4NQ10T,135 |
NXP Semiconductors |
MOSFET N-CH 100V 3.5A SOT223 |
8,000 |
4,000:$0.28400
8,000:$0.26500
12,000:$0.25500
28,000:$0.24500
100,000:$0.23500
|
PSMN039-100YS,115 PDF参数
类别: |
分离式半导体产品
|
FET 型: |
MOSFET N 通道,金属氧化物
|
FET 特点: |
标准
|
漏极至源极电压(Vdss): |
100V
|
电流 - 连续漏极(Id) @ 25° C: |
28.1A
|
开态Rds(最大)@ Id, Vgs @ 25° C: |
39.5 毫欧 @ 15A,10V
|
Id 时的 Vgs(th)(最大): |
4V @ 1mA
|
闸电荷(Qg) @ Vgs: |
23nC @ 10V
|
输入电容 (Ciss) @ Vds: |
1847pF @ 50V
|
功率 - 最大: |
74W
|
安装类型: |
表面贴装
|
封装/外壳: |
SC-100,SOT-669,4-LFPAK
|
供应商设备封装: |
LFPAK,Power-SO8
|
包装: |
Digi-Reel®
|