分离式半导体产品 PSMN039-100YS,115品牌、价格、PDF参数

PSMN039-100YS,115 • 品牌、价格
元器件型号 厂商 描述 数量 价格
PSMN039-100YS,115 NXP Semiconductors MOSFET N-CH LFPAK 1,658 1:$0.85000
10:$0.74400
25:$0.65760
100:$0.57300
250:$0.49876
500:$0.42456
PSMN039-100YS,115 NXP Semiconductors MOSFET N-CH LFPAK 0 1,500:$0.32976
3,000:$0.29885
7,500:$0.27823
10,500:$0.26793
37,500:$0.25763
75,000:$0.25350
150,000:$0.24732
PSMN5R0-30YL,115 NXP Semiconductors MOSFET N-CH 30V 91A LFPAK 4,500 1,500:$0.30112
3,000:$0.27289
7,500:$0.25407
10,500:$0.24466
37,500:$0.23525
75,000:$0.23149
150,000:$0.22584
BSP110,115 NXP Semiconductors MOSFET N-CH 100V 520MA SOT223 5,705 1:$0.75000
10:$0.66100
25:$0.58400
100:$0.50900
250:$0.44312
500:$0.37718
PHT4NQ10T,135 NXP Semiconductors MOSFET N-CH 100V 3.5A SOT223 8,883 1:$0.81000
10:$0.70800
25:$0.62560
100:$0.54520
250:$0.47456
500:$0.40396
1,000:$0.32357
PHT4NQ10T,135 NXP Semiconductors MOSFET N-CH 100V 3.5A SOT223 8,000 4,000:$0.28400
8,000:$0.26500
12,000:$0.25500
28,000:$0.24500
100,000:$0.23500
PSMN039-100YS,115 • PDF参数
类别: 分离式半导体产品
FET 型: MOSFET N 通道,金属氧化物
FET 特点: 标准
漏极至源极电压(Vdss): 100V
电流 - 连续漏极(Id) @ 25° C: 28.1A
开态Rds(最大)@ Id, Vgs @ 25° C: 39.5 毫欧 @ 15A,10V
Id 时的 Vgs(th)(最大): 4V @ 1mA
闸电荷(Qg) @ Vgs: 23nC @ 10V
输入电容 (Ciss) @ Vds: 1847pF @ 50V
功率 - 最大: 74W
安装类型: 表面贴装
封装/外壳: SC-100,SOT-669,4-LFPAK
供应商设备封装: LFPAK,Power-SO8
包装: Digi-Reel®