分离式半导体产品 PSMN1R3-30YL,115品牌、价格、PDF参数

PSMN1R3-30YL,115 • 品牌、价格
元器件型号 厂商 描述 数量 价格
PSMN1R3-30YL,115 NXP Semiconductors MOSFET N-CH 30V 100A LFPAK 7,193 1:$1.52000
10:$1.34000
25:$1.20960
100:$1.05840
250:$0.92820
500:$0.82320
BUK6607-55C,118 NXP Semiconductors MOSFET N-CH TRENCH D2PACK 4,323 1:$1.64000
10:$1.47700
25:$1.32320
100:$1.18970
250:$1.05636
BUK6607-55C,118 NXP Semiconductors MOSFET N-CH TRENCH D2PACK 4,000 800:$0.81023
1,600:$0.74356
2,400:$0.69228
5,600:$0.66664
20,000:$0.64100
40,000:$0.63074
80,000:$0.61536
BSP89,115 NXP Semiconductors MOSFET N-CH 240V 375MA SOT223 63,000 1,000:$0.25600
2,000:$0.23200
5,000:$0.21600
10,000:$0.20800
25,000:$0.20000
50,000:$0.19700
100,000:$0.19200
BUK9607-30B,118 NXP Semiconductors MOSFET N-CH 30V 75A D2PAK 4,000 800:$0.80095
1,600:$0.72375
2,400:$0.67550
5,600:$0.64173
20,000:$0.61760
40,000:$0.59830
80,000:$0.57900
BUK9612-55B,118 NXP Semiconductors MOSFET N-CH 55V 75A D2PAK 14,143 1:$1.74000
10:$1.53900
25:$1.38960
100:$1.21590
250:$1.06632
PSMN1R3-30YL,115 • PDF参数
类别: 分离式半导体产品
FET 型: MOSFET N 通道,金属氧化物
FET 特点: 逻辑电平门
漏极至源极电压(Vdss): 30V
电流 - 连续漏极(Id) @ 25° C: 100A
开态Rds(最大)@ Id, Vgs @ 25° C: 1.3 毫欧 @ 15A,10V
Id 时的 Vgs(th)(最大): 2.15V @ 1mA
闸电荷(Qg) @ Vgs: 100nC @ 10V
输入电容 (Ciss) @ Vds: 6227pF @ 12V
功率 - 最大: 121W
安装类型: 表面贴装
封装/外壳: SOT1023,4-LFPAK
供应商设备封装: LFPAK,Power-SO8
包装: 剪切带 (CT)