分离式半导体产品 PSMN4R0-30YL,115品牌、价格、PDF参数

PSMN4R0-30YL,115 • 品牌、价格
元器件型号 厂商 描述 数量 价格
PSMN4R0-30YL,115 NXP Semiconductors MOSFET N-CH 30V 100A SOT669 2,437 1:$0.97000
10:$0.85700
25:$0.77400
100:$0.67740
250:$0.59404
500:$0.52684
BUK662R5-30C,118 NXP Semiconductors MOSFET N-CH TRENCH D2PACK 4,790 1:$2.04000
10:$1.84500
25:$1.65320
100:$1.48640
250:$1.31984
PSMN4R0-30YL,115 NXP Semiconductors MOSFET N-CH 30V 100A SOT669 2,437 1:$0.97000
10:$0.85700
25:$0.77400
100:$0.67740
250:$0.59404
500:$0.52684
BUK662R5-30C,118 NXP Semiconductors MOSFET N-CH TRENCH D2PACK 4,000 800:$1.01230
1,600:$0.92901
2,400:$0.86495
5,600:$0.83291
20,000:$0.80088
40,000:$0.78806
80,000:$0.76884
PSMN4R0-30YL,115 NXP Semiconductors MOSFET N-CH 30V 100A SOT669 1,500 1,500:$0.40320
3,000:$0.37632
7,500:$0.35750
10,500:$0.34406
37,500:$0.33331
75,000:$0.32256
PSMN4R0-30YL,115 • PDF参数
类别: 分离式半导体产品
FET 型: MOSFET N 通道,金属氧化物
FET 特点: 逻辑电平门
漏极至源极电压(Vdss): 30V
电流 - 连续漏极(Id) @ 25° C: 100A
开态Rds(最大)@ Id, Vgs @ 25° C: 4 毫欧 @ 15A,10V
Id 时的 Vgs(th)(最大): 2.15V @ 1mA
闸电荷(Qg) @ Vgs: 36.6nC @ 10V
输入电容 (Ciss) @ Vds: 2090pF @ 12V
功率 - 最大: 69W
安装类型: 表面贴装
封装/外壳: SC-100,SOT-669,4-LFPAK
供应商设备封装: LFPAK,Power-SO8
包装: Digi-Reel®