PSMN1R5-30YLC,115 • 品牌、价格
| 元器件型号 |
厂商 |
描述 |
数量 |
价格 |
| PSMN1R5-30YLC,115 |
NXP Semiconductors |
MOSFET N-CH 30V 100A LFPAK |
0 |
1,500:$0.54345
3,000:$0.50722
7,500:$0.48186
10,500:$0.46374
37,500:$0.44925
75,000:$0.43476
|
| PSMN015-100B,118 |
NXP Semiconductors |
MOSFET N-CH 100V 75A SOT404 |
1,748 |
1:$2.30000
10:$2.07400
25:$1.85760
100:$1.67040
250:$1.48320
|
| PSMN015-100B,118 |
NXP Semiconductors |
MOSFET N-CH 100V 75A SOT404 |
1,748 |
1:$2.30000
10:$2.07400
25:$1.85760
100:$1.67040
250:$1.48320
|
| PSMN130-200D,118 |
NXP Semiconductors |
MOSFET N-CH 200V 20A SOT428 |
9,495 |
1:$1.78000
10:$1.57200
25:$1.41920
100:$1.24190
250:$1.08908
500:$0.96588
1,000:$0.76384
|
| PSMN130-200D,118 |
NXP Semiconductors |
MOSFET N-CH 200V 20A SOT428 |
9,495 |
1:$1.78000
10:$1.57200
25:$1.41920
100:$1.24190
250:$1.08908
500:$0.96588
1,000:$0.76384
|
PSMN1R5-30YLC,115 • PDF参数
| 类别: |
分离式半导体产品
|
| FET 型: |
MOSFET N 通道，金属氧化物
|
| FET 特点: |
逻辑电平门
|
| 漏极至源极电压(Vdss): |
30V
|
| 电流 - 连续漏极(Id) @ 25° C: |
100A
|
| 开态Rds（最大）@ Id, Vgs @ 25° C: |
1.55 毫欧 @ 25A，10V
|
| Id 时的 Vgs(th)（最大）: |
1.95V @ 1mA
|
| 闸电荷(Qg) @ Vgs: |
65nC @ 10V
|
| 输入电容 (Ciss) @ Vds: |
4044pF @ 15V
|
| 功率 - 最大: |
179W
|
| 安装类型: |
表面贴装
|
| 封装/外壳: |
SC-100，SOT-669，4-LFPAK
|
| 供应商设备封装: |
LFPAK，Power-SO8
|
| 包装: |
带卷 (TR)
|