分离式半导体产品 PSMN3R5-80ES,127品牌、价格、PDF参数

PSMN3R5-80ES,127 • 品牌、价格
元器件型号 厂商 描述 数量 价格
PSMN3R5-80ES,127 NXP Semiconductors MOSFET N-CH 80V 120A I2PAK 490 1:$3.29000
10:$2.93500
25:$2.64160
100:$2.40670
250:$2.17192
500:$1.94884
1,000:$1.64360
2,500:$1.56142
5,000:$1.50272
PHP33NQ20T,127 NXP Semiconductors MOSFET N-CH 200V 32.7A SOT78 4,840 1:$2.48000
10:$2.24000
25:$2.00000
100:$1.80000
250:$1.60000
500:$1.40000
1,000:$1.16000
2,500:$1.08000
5,000:$1.04000
BUK7506-55B,127 NXP Semiconductors MOSFET N-CH 55V 75A TO220AB 1,240 1:$2.47000
10:$2.22800
25:$1.98960
100:$1.79060
250:$1.59160
500:$1.39266
1,000:$1.15391
2,500:$1.07433
5,000:$1.03454
PSMN2R0-60ES,127 NXP Semiconductors MOSFET N-CH 60V 120A I2PAK 745 1:$3.29000
10:$2.93500
25:$2.64160
100:$2.40670
250:$2.17192
500:$1.94884
1,000:$1.64360
2,500:$1.56142
5,000:$1.50272
BUK754R3-75C,127 NXP Semiconductors MOSFET N-CH TRENCH 75V TO220AB-3 984 1:$3.29000
10:$2.93500
25:$2.64160
100:$2.40690
250:$2.17208
500:$1.94900
1,000:$1.64374
2,500:$1.56155
5,000:$1.50285
PSMN3R5-80ES,127 • PDF参数
类别: 分离式半导体产品
FET 型: MOSFET N 通道,金属氧化物
FET 特点: 标准
漏极至源极电压(Vdss): 80V
电流 - 连续漏极(Id) @ 25° C: 120A
开态Rds(最大)@ Id, Vgs @ 25° C: 3.5 毫欧 @ 25A,10V
Id 时的 Vgs(th)(最大): 4V @ 1mA
闸电荷(Qg) @ Vgs: 139nC @ 10V
输入电容 (Ciss) @ Vds: 9961pF @ 40V
功率 - 最大: 338W
安装类型: 通孔
封装/外壳: TO-262-3,长引线,I²Pak,TO-262AA
供应商设备封装: I2PAK
包装: 管件