分离式半导体产品 BUK6E2R0-30C,127品牌、价格、PDF参数

BUK6E2R0-30C,127 • 品牌、价格
元器件型号 厂商 描述 数量 价格
BUK6E2R0-30C,127 NXP Semiconductors MOSFET N-CH TRENCH I2PACK 4,970 1:$3.68000
10:$3.28500
25:$2.95600
100:$2.69330
250:$2.43052
500:$2.18090
1,000:$1.83932
2,500:$1.74736
5,000:$1.68166
BUK6E3R2-55C,127 NXP Semiconductors MOSFET N-CH TRENCH I2PACK 4,975 1:$3.68000
10:$3.28500
25:$2.95600
100:$2.69330
250:$2.43052
500:$2.18090
1,000:$1.83932
2,500:$1.74736
5,000:$1.68166
BUK9E08-55B,127 NXP Semiconductors MOSFET N-CH TRENCH 55V I2PAK 4,965 1:$2.46000
10:$2.22200
25:$1.98400
100:$1.78560
250:$1.58720
500:$1.38880
1,000:$1.15072
2,500:$1.07136
5,000:$1.03168
PHP20NQ20T,127 NXP Semiconductors MOSFET N-CH 200V 20A SOT78 4,774 1:$2.17000
10:$1.96000
25:$1.75000
100:$1.57500
250:$1.40000
500:$1.22500
1,000:$1.01500
2,500:$0.94500
5,000:$0.91000
BUK6E2R0-30C,127 • PDF参数
类别: 分离式半导体产品
FET 型: MOSFET N 通道,金属氧化物
FET 特点: 标准
漏极至源极电压(Vdss): 30V
电流 - 连续漏极(Id) @ 25° C: 120A
开态Rds(最大)@ Id, Vgs @ 25° C: 2.2 毫欧 @ 25A,10V
Id 时的 Vgs(th)(最大): 2.8V @ 1mA
闸电荷(Qg) @ Vgs: 229nC @ 10V
输入电容 (Ciss) @ Vds: 14964pF @ 25V
功率 - 最大: 306W
安装类型: 通孔
封装/外壳: TO-262-3,长引线,I²Pak,TO-262AA
供应商设备封装: I2PAK
包装: 管件