PSMN013-100ES,127 • 品牌、价格
| 元器件型号 |
厂商 |
描述 |
数量 |
价格 |
| PSMN013-100ES,127 |
NXP Semiconductors |
MOSFET N-CH 100V I2PAK |
5,000 |
1:$2.13000
10:$1.92500
25:$1.71880
100:$1.54690
250:$1.37500
500:$1.20312
1,000:$0.99688
2,500:$0.92812
5,000:$0.89375
|
| BUK794R1-40BT,127 |
NXP Semiconductors |
MOSFET N-CH 40V 75A TO220AB |
2,000 |
1:$3.97000
10:$3.54200
25:$3.18720
100:$2.90400
250:$2.62072
500:$2.35156
1,000:$1.98324
2,500:$1.88408
5,000:$1.81325
|
| BUK6E4R0-75C,127 |
NXP Semiconductors |
MOSFET N-CH TRENCH I2PACK |
5,000 |
1:$3.96000
10:$3.53500
25:$3.18120
100:$2.89830
250:$2.61552
500:$2.34690
1,000:$1.97932
2,500:$1.88036
5,000:$1.80966
|
| PSMN2R8-80BS,118 |
NXP Semiconductors |
MOSF N CH 80V 120A D2PAK |
229 |
1:$3.11000
10:$2.78600
25:$2.50560
100:$2.27880
250:$2.06280
|
PSMN013-100ES,127 • PDF参数
| 类别: |
分离式半导体产品
|
| FET 型: |
MOSFET N 通道，金属氧化物
|
| FET 特点: |
逻辑电平门
|
| 漏极至源极电压(Vdss): |
100V
|
| 电流 - 连续漏极(Id) @ 25° C: |
68A
|
| 开态Rds（最大）@ Id, Vgs @ 25° C: |
13.9 毫欧 @ 15A，10V
|
| Id 时的 Vgs(th)（最大）: |
4V @ 1mA
|
| 闸电荷(Qg) @ Vgs: |
59nC @ 10V
|
| 输入电容 (Ciss) @ Vds: |
3195pF @ 50V
|
| 功率 - 最大: |
170W
|
| 安装类型: |
通孔
|
| 封装/外壳: |
TO-262-3，长引线，I²Pak，TO-262AA
|
| 供应商设备封装: |
I2PAK
|
| 包装: |
管件
|