分离式半导体产品 SIS407DN-T1-GE3品牌、价格、PDF参数

SIS407DN-T1-GE3 • 品牌、价格
元器件型号 厂商 描述 数量 价格
SIS407DN-T1-GE3 Vishay Siliconix MOSFET P-CH 20V 1212-8 PPAK 0 3,000:$0.40600
6,000:$0.38570
15,000:$0.36975
30,000:$0.35960
75,000:$0.34800
SIHP5N50D-E3 Vishay Siliconix MOSFET N-CH 500V 5.3A TO220AB 0 1,000:$0.58905
2,000:$0.54978
5,000:$0.52229
10,000:$0.50069
25,000:$0.48695
50,000:$0.47124
SIS438DN-T1-GE3 Vishay Siliconix MOSFET N-CH D-S 20V PPAK 1212-8 200 1:$0.95000
25:$0.73120
100:$0.64500
250:$0.55900
500:$0.47300
1,000:$0.37625
SIS438DN-T1-GE3 Vishay Siliconix MOSFET N-CH D-S 20V PPAK 1212-8 200 1:$0.95000
25:$0.73120
100:$0.64500
250:$0.55900
500:$0.47300
1,000:$0.37625
SI3424DV-T1-GE3 Vishay Siliconix MOSFET N-CH 30V 5A 6-TSOP 0 3,000:$0.58800
SI7425DN-T1-GE3 Vishay Siliconix MOSFET P-CH D-S 12V PPAK 1212-8 0 3,000:$0.58660
SIS438DN-T1-GE3 Vishay Siliconix MOSFET N-CH D-S 20V PPAK 1212-8 0 3,000:$0.31175
6,000:$0.29025
15,000:$0.27950
30,000:$0.26875
SIS407DN-T1-GE3 • PDF参数
类别: 分离式半导体产品
FET 型: MOSFET P 通道,金属氧化物
FET 特点: 标准
漏极至源极电压(Vdss): 20V
电流 - 连续漏极(Id) @ 25° C: 25A
开态Rds(最大)@ Id, Vgs @ 25° C: 9.5 毫欧 @ 15.3A,4.5V
Id 时的 Vgs(th)(最大): 1V @ 250µA
闸电荷(Qg) @ Vgs: 93.8nC @ 8V
输入电容 (Ciss) @ Vds: 2760pF @ 10V
功率 - 最大: 33W
安装类型: 表面贴装
封装/外壳: PowerPAK? 1212-8
供应商设备封装: PowerPAK? 1212-8
包装: 带卷 (TR)