分离式半导体产品 SIHD5N50D-GE3品牌、价格、PDF参数

SIHD5N50D-GE3 • 品牌、价格
元器件型号 厂商 描述 数量 价格
SIHD5N50D-GE3 Vishay Siliconix MOSFET N-CH 500V 5.3A TO252 DPK 0 3,000:$0.50148
6,000:$0.47641
15,000:$0.45671
30,000:$0.44417
75,000:$0.42984
SUD17N25-165-E3 Vishay Siliconix MOSFET N-CH D-S 250V TO252 175 1:$1.80000
25:$1.41920
100:$1.27710
250:$1.11156
500:$0.99330
1,000:$0.78045
SQ3418EEV-T1-GE3 Vishay Siliconix MOSFET N-CH 40V 8A 6TSOP 0 3,000:$0.22320
6,000:$0.20880
15,000:$0.19440
30,000:$0.18360
75,000:$0.18000
150,000:$0.17280
SIHU5N50D-E3 Vishay Siliconix MOSFET N-CH 500V 5.3A TO251 IPAK 0 1:$1.34000
25:$1.06120
100:$0.95500
250:$0.83120
500:$0.74278
1,000:$0.58361
SQ3456BEV-T1-GE3 Vishay Siliconix MOSFET N-CH 30V 7.8A 6TSOP 739 1:$0.79000
25:$0.55440
100:$0.47520
250:$0.41040
500:$0.35280
1,000:$0.27360
SIHD5N50D-GE3 • PDF参数
类别: 分离式半导体产品
FET 型: MOSFET N 通道,金属氧化物
FET 特点: 标准
漏极至源极电压(Vdss): 500V
电流 - 连续漏极(Id) @ 25° C: 5.3A
开态Rds(最大)@ Id, Vgs @ 25° C: 1.5 欧姆 @ 2.5A,10V
Id 时的 Vgs(th)(最大): 5V @ 250µA
闸电荷(Qg) @ Vgs: 20nC @ 10V
输入电容 (Ciss) @ Vds: 325pF @ 100V
功率 - 最大: 104W
安装类型: 表面贴装
封装/外壳: TO-252-3,DPak(2 引线+接片),SC-63
供应商设备封装: TO-252AA
包装: 带卷 (TR)