分离式半导体产品 SIRA02DP-T1-GE3品牌、价格、PDF参数

SIRA02DP-T1-GE3 • 品牌、价格
元器件型号 厂商 描述 数量 价格
SIRA02DP-T1-GE3 Vishay Siliconix MOSFET N-CH 30V 50A SO-8 0 1:$2.00000
25:$1.53920
100:$1.39650
250:$1.25400
500:$1.08300
1,000:$0.91200
SI1303DL-T1-GE3 Vishay Siliconix MOSFET P-CH 20V 670MA SOT323-3 0 3,000:$0.17050
IRF530STRRPBF Vishay Siliconix MOSFET N-CH 100V 14A D2PAK 0 800:$0.79514
1,600:$0.71850
2,400:$0.67060
5,600:$0.63707
20,000:$0.61073
40,000:$0.59396
SI7860ADP-T1-GE3 Vishay Siliconix MOSFET N-CH D-S 30V PPAK 8SOIC 0 3,000:$0.79110
SQD35N05-26L-GE3 Vishay Siliconix MOSFET N-CH D-S 55V 30A TO252 0 2,000:$1.33133
SIRA02DP-T1-GE3 Vishay Siliconix MOSFET N-CH 30V 50A SO-8 0 3,000:$0.76950
6,000:$0.74100
15,000:$0.71250
30,000:$0.69825
75,000:$0.68400
SI1307DL-T1-GE3 Vishay Siliconix MOSFET P-CH 12V 850MA SOT323-3 0 3,000:$0.20925
SIA448DJ-T1-GE3 Vishay Siliconix MOSFET N-CH 20V D-S SC70-6L 0 1:$0.72000
25:$0.50040
100:$0.42900
250:$0.37052
500:$0.31850
1,000:$0.24700
SIRA02DP-T1-GE3 • PDF参数
类别: 分离式半导体产品
FET 型: MOSFET N 通道,金属氧化物
FET 特点: 逻辑电平门
漏极至源极电压(Vdss): 30V
电流 - 连续漏极(Id) @ 25° C: 50A
开态Rds(最大)@ Id, Vgs @ 25° C: 2 毫欧 @ 15A,10V
Id 时的 Vgs(th)(最大): 2.2V @ 250µA
闸电荷(Qg) @ Vgs: 117nC @ 10V
输入电容 (Ciss) @ Vds: 6150pF @ 15V
功率 - 最大: 50W
安装类型: 表面贴装
封装/外壳: PowerPAK? SO-8
供应商设备封装: PowerPAK? SO-8
包装: Digi-Reel®