分离式半导体产品 SQ3426EEV-T1-GE3品牌、价格、PDF参数

SQ3426EEV-T1-GE3 • 品牌、价格
元器件型号 厂商 描述 数量 价格
SQ3426EEV-T1-GE3 Vishay Siliconix MOSFET N-CH 60V 7A 6TSOP 0 3,000:$0.22320
6,000:$0.20880
15,000:$0.19440
30,000:$0.18360
75,000:$0.18000
150,000:$0.17280
SIE848DF-T1-GE3 Vishay Siliconix MOSFET N-CH D-S 30V POLARPAK 0 3,000:$1.14750
6,000:$1.10500
15,000:$1.06250
30,000:$1.04125
75,000:$1.02000
SI3853DV-T1-GE3 Vishay Siliconix MOSFET P-CH 20V 1.6A 6-TSOP 0 3,000:$0.33350
SI3812DV-T1-GE3 Vishay Siliconix MOSFET N-CH 20V 2A 6-TSOP 0 3,000:$0.33350
SQ4840EY-T1-GE3 Vishay Siliconix MOSFET N-CH D-S 40V 8SOIC 0 2,500:$1.12455
SI1300BDL-T1-GE3 Vishay Siliconix MOSFET N-CH D-S 20V SC-70-3 0 1:$0.58000
25:$0.38000
100:$0.31200
250:$0.26000
500:$0.21600
1,000:$0.16000
IRLR024TRLPBF Vishay Siliconix MOSFET N-CH 60V 14A DPAK 0 3,000:$0.73170
SIE878DF-T1-GE3 Vishay Siliconix MOSFET N-CH 25V POLARPAK 0 1:$1.80000
25:$1.39040
100:$1.26180
250:$1.13300
500:$0.97850
1,000:$0.82400
SQD50P06-15L-GE3 Vishay Siliconix MOSFET P-CH 60V 50A TO252 0 2,000:$1.28250
SQD50P04-09L-GE3 Vishay Siliconix MOSFET P-CH D-S 40V TO252 0 2,000:$1.28250
SQ3426EEV-T1-GE3 • PDF参数
类别: 分离式半导体产品
FET 型: MOSFET N 通道,金属氧化物
FET 特点: 逻辑电平门
漏极至源极电压(Vdss): 60V
电流 - 连续漏极(Id) @ 25° C: 7A
开态Rds(最大)@ Id, Vgs @ 25° C: 42 毫欧 @ 5A,10V
Id 时的 Vgs(th)(最大): 2.5V @ 250µA
闸电荷(Qg) @ Vgs: 12nC @ 4.5V
输入电容 (Ciss) @ Vds: 700pF @ 30V
功率 - 最大: 5W
安装类型: 表面贴装
封装/外壳: SC-74,SOT-457
供应商设备封装: 6-TSOP
包装: 带卷 (TR)