分离式半导体产品 SQ2308ES-T1-GE3品牌、价格、PDF参数

SQ2308ES-T1-GE3 • 品牌、价格
元器件型号 厂商 描述 数量 价格
SQ2308ES-T1-GE3 Vishay Siliconix MOSFET N-CH D-S 60V TO236 0 3,000:$0.21700
SI4368DY-T1-GE3 Vishay Siliconix MOSFET N-CH 30V 17A 8-SOIC 0 2,500:$0.82485
SUD50N06-08H-E3 Vishay Siliconix MOSFET N-CH D-S 60V TO252 0 2,000:$1.71570
IRLZ24SPBF Vishay Siliconix MOSFET N-CH 60V 17A D2PAK 0 1,000:$0.90045
SI2333DS-T1-GE3 Vishay Siliconix MOSFET P-CH 12V SOT23-3 0 3,000:$0.22475
SQD25N06-22L-GE3 Vishay Siliconix MOSFET N-CH D-S 60V 25A TO252 0 2,000:$0.89100
SIE862DF-T1-GE3 Vishay Siliconix MOSFET N-CH D-S 30V POLARPAK 0 3,000:$0.89100
SQ3426EEV-T1-GE3 Vishay Siliconix MOSFET N-CH 60V 7A 6TSOP 38 1:$0.79000
25:$0.55440
100:$0.47520
250:$0.41040
500:$0.35280
1,000:$0.27360
SQ3426EEV-T1-GE3 Vishay Siliconix MOSFET N-CH 60V 7A 6TSOP 38 1:$0.79000
25:$0.55440
100:$0.47520
250:$0.41040
500:$0.35280
1,000:$0.27360
SQ3419EEV-T1-GE3 Vishay Siliconix MOSFET P-CH 40V 7.4A 6TSOP 0 1:$0.79000
25:$0.55440
100:$0.47520
250:$0.41040
500:$0.35280
1,000:$0.27360
SQ2308ES-T1-GE3 • PDF参数
类别: 分离式半导体产品
FET 型: MOSFET N 通道,金属氧化物
FET 特点: 逻辑电平门
漏极至源极电压(Vdss): 60V
电流 - 连续漏极(Id) @ 25° C: 2.3A
开态Rds(最大)@ Id, Vgs @ 25° C: 155 毫欧 @ 6A,10V
Id 时的 Vgs(th)(最大): 2.5V @ 250µA
闸电荷(Qg) @ Vgs: 8.5nC @ 10V
输入电容 (Ciss) @ Vds: 305pF @ 25V
功率 - 最大: 2W
安装类型: 表面贴装
封装/外壳: TO-236-3,SC-59,SOT-23-3
供应商设备封装: SOT-23-3(TO-236)
包装: 带卷 (TR)