分离式半导体产品 IPB06N03LAT品牌、价格、PDF参数

IPB06N03LAT • 品牌、价格
元器件型号 厂商 描述 数量 价格
IPB06N03LAT Infineon Technologies MOSFET N-CH 25V 50A D2PAK 0
BSS192PE6327T Infineon Technologies MOSFET P-CH 250V 190MA SOT-89 0
BSS192PE6327T Infineon Technologies MOSFET P-CH 250V 190MA SOT-89 0
BSP317PE6327T Infineon Technologies MOSFET P-CH 250V 430MA SOT223 0
BSP317PE6327T Infineon Technologies MOSFET P-CH 250V 430MA SOT223 0
BSP316PE6327T Infineon Technologies MOSFET P-CH 100V 680MA SOT223 0
BSP316PE6327T Infineon Technologies MOSFET P-CH 100V 680MA SOT223 0
BSP295E6327T Infineon Technologies MOSFET N-CH 60V 1.8A SOT223 0 1:$0.94000
10:$0.75500
100:$0.56620
1,000:$0.32504
BSP295E6327T Infineon Technologies MOSFET N-CH 60V 1.8A SOT223 0 1,000:$0.32504
5,000:$0.29358
10,000:$0.28834
BSP171PE6327T Infineon Technologies MOSFET P-CH 60V 1.9A SOT223 0
BSP171PE6327T Infineon Technologies MOSFET P-CH 60V 1.9A SOT223 0
BSP170PE6327T Infineon Technologies MOSFET P-CH 60V 1.9A SOT223 0
BSP170PE6327T Infineon Technologies MOSFET P-CH 60V 1.9A SOT223 0
BSP129E6327T Infineon Technologies MOSFET N-CH 240V 350MA SOT223 0
BSP129E6327T Infineon Technologies MOSFET N-CH 240V 350MA SOT223 0
IPB06N03LAT • PDF参数
类别: 分离式半导体产品
FET 型: MOSFET N 通道,金属氧化物
FET 特点: 逻辑电平门
漏极至源极电压(Vdss): 25V
电流 - 连续漏极(Id) @ 25° C: 50A
开态Rds(最大)@ Id, Vgs @ 25° C: 5.9 毫欧 @ 30A,10V
Id 时的 Vgs(th)(最大): 2V @ 40µA
闸电荷(Qg) @ Vgs: 22nC @ 5V
输入电容 (Ciss) @ Vds: 2653pF @ 15V
功率 - 最大: 83W
安装类型: 表面贴装
封装/外壳: TO-263-3,D²Pak(2 引线+接片),TO-263AB
供应商设备封装: PG-TO263-3
包装: 带卷 (TR)