分离式半导体产品 IPI110N20N3 G品牌、价格、PDF参数

IPI110N20N3 G • 品牌、价格
元器件型号 厂商 描述 数量 价格
IPI110N20N3 G Infineon Technologies MOSFET N-CH 200V 88A TO262-3 0 1:$8.06000
10:$7.25400
25:$6.60960
100:$5.96460
250:$5.48096
500:$4.99736
1,000:$4.35254
2,500:$4.19133
5,000:$4.03013
IPI041N12N3 G Infineon Technologies MOSFET N-CH 120V 120A TO262-3 0 1:$6.94000
10:$6.20000
25:$5.58000
100:$5.08400
250:$4.58800
500:$4.11680
1,000:$3.47200
2,500:$3.29840
5,000:$3.16200
IPW65R190CFD Infineon Technologies MOSFET N-CH 650V 17.5A TO247 0 1:$6.04000
10:$5.39600
100:$4.42450
250:$3.99284
500:$3.58278
1,000:$3.02162
2,500:$2.87054
5,000:$2.75183
10,000:$2.67629
IPW65R080CFD Infineon Technologies MOSFET N-CH 700V 43.3A TO247 0 240:$10.28875
IPI110N20N3 G • PDF参数
类别: 分离式半导体产品
FET 型: MOSFET N 通道,金属氧化物
FET 特点: 逻辑电平门
漏极至源极电压(Vdss): 200V
电流 - 连续漏极(Id) @ 25° C: 88A
开态Rds(最大)@ Id, Vgs @ 25° C: 11 毫欧 @ 88A,10V
Id 时的 Vgs(th)(最大): 4V @ 270µA
闸电荷(Qg) @ Vgs: 87nC @ 10V
输入电容 (Ciss) @ Vds: 7100pF @ 100V
功率 - 最大: 300W
安装类型: 通孔
封装/外壳: TO-262-3,长引线,I²Pak,TO-262AA
供应商设备封装: PG-TO262-3
包装: 管件