分离式半导体产品 BSC018NE2LSI品牌、价格、PDF参数

BSC018NE2LSI • 品牌、价格
元器件型号 厂商 描述 数量 价格
BSC018NE2LSI Infineon Technologies MOSFET N-CH 25V 29A TDSON-8 5,000 1:$2.27000
10:$1.94200
25:$1.74760
100:$1.58590
250:$1.42408
500:$1.22988
1,000:$1.03568
2,500:$0.93858
BSC018NE2LSI Infineon Technologies MOSFET N-CH 25V 29A TDSON-8 5,000 1:$2.27000
10:$1.94200
25:$1.74760
100:$1.58590
250:$1.42408
500:$1.22988
1,000:$1.03568
2,500:$0.93858
BSC018NE2LSI Infineon Technologies MOSFET N-CH 25V 29A TDSON-8 5,000 5,000:$0.84149
10,000:$0.80913
25,000:$0.79294
50,000:$0.77676
IPB054N06N3 G Infineon Technologies MOSFET N-CH 60V 80A TO263-3 2,000 1:$1.99000
10:$1.70900
25:$1.53840
100:$1.39600
250:$1.25356
500:$1.08262
IPB054N06N3 G Infineon Technologies MOSFET N-CH 60V 80A TO263-3 2,000 1,000:$0.82621
2,000:$0.76923
5,000:$0.74074
10,000:$0.71225
25,000:$0.69801
50,000:$0.68376
BSC018NE2LSI • PDF参数
类别: 分离式半导体产品
FET 型: MOSFET N 通道,金属氧化物
FET 特点: 逻辑电平门
漏极至源极电压(Vdss): 25V
电流 - 连续漏极(Id) @ 25° C: 100A
开态Rds(最大)@ Id, Vgs @ 25° C: 1.8 毫欧 @ 30A,10V
Id 时的 Vgs(th)(最大): 2V @ 250µA
闸电荷(Qg) @ Vgs: 36nC @ 10V
输入电容 (Ciss) @ Vds: 2500pF @ 12V
功率 - 最大: 69W
安装类型: 表面贴装
封装/外壳: 8-PowerTDFN
供应商设备封装: PG-TDSON-8
包装: Digi-Reel®