分离式半导体产品 BTS247Z E3062A品牌、价格、PDF参数

BTS247Z E3062A • 品牌、价格
元器件型号 厂商 描述 数量 价格
BTS247Z E3062A Infineon Technologies MOSFET N-CH 55V 33A TO220-5 0 1,000:$1.22612
IPI023NE7N3 G Infineon Technologies MOSFET N-CH 75V 120A TO262-3 0 1:$6.50000
10:$5.80500
25:$5.22440
100:$4.75990
250:$4.29552
500:$3.85436
1,000:$3.25066
2,500:$3.08813
5,000:$2.96042
BTS121A E3045A Infineon Technologies MOSFET N CH 100V 22A TO-220AB 0 1:$10.15000
10:$9.19200
25:$8.42560
100:$7.65980
250:$6.89384
500:$6.31934
BTS121A E3045A Infineon Technologies MOSFET N CH 100V 22A TO-220AB 0 1:$10.15000
10:$9.19200
25:$8.42560
100:$7.65980
250:$6.89384
500:$6.31934
IPB049N06L3 G Infineon Technologies MOSFET N-CH 60V 80A TO263-3 0 1:$2.04000
10:$1.75100
25:$1.57560
100:$1.42960
250:$1.28372
500:$1.10866
IPB049N06L3 G Infineon Technologies MOSFET N-CH 60V 80A TO263-3 0 1,000:$0.84608
2,000:$0.78773
5,000:$0.75855
10,000:$0.72938
25,000:$0.71479
50,000:$0.70020
IPB054N06N3 G Infineon Technologies MOSFET N-CH 60V 80A TO263-3 2,000 1:$1.99000
10:$1.70900
25:$1.53840
100:$1.39600
250:$1.25356
500:$1.08262
IPB65R190CFD Infineon Technologies MOSFET N-CH 650V 17.5A TO263 0 1:$5.58000
10:$5.02000
25:$4.55560
100:$4.09070
250:$3.71880
500:$3.25396
BTS247Z E3062A • PDF参数
类别: 分离式半导体产品
FET 型: MOSFET N 通道,金属氧化物
FET 特点: 逻辑电平门
漏极至源极电压(Vdss): 55V
电流 - 连续漏极(Id) @ 25° C: 33A
开态Rds(最大)@ Id, Vgs @ 25° C: 18 毫欧 @ 12A,10V
Id 时的 Vgs(th)(最大): 2V @ 90µA
闸电荷(Qg) @ Vgs: 90nC @ 10V
输入电容 (Ciss) @ Vds: 1730pF @ 25V
功率 - 最大: 120W
安装类型: 通孔
封装/外壳: TO-263-5,D²Pak(4 引线+接片),TO-263BB
供应商设备封装: P-TO220-5
包装: 带卷 (TR)