| BB-XXXXSX |
Bothhand USA, LP. |
1 to 2 Watt Isolated DC-DC Converter Single / Dual Output |
3/261.79kb |
|
| BB0502X7R104M16VNT9820 |
TriQuint Semiconductor |
9.9-11.2Gb/s Optical Modulator Driver |
13/920.65kb |
PDF
|
| BB1 |
NEC |
COMPOUND TRANSISTOR on-chip resistor NPN silicon epitaxial transistor For mid-speed switching |
6/104.63kb |
PDF
|
| BB101C |
Hitachi Semiconductor |
Build in Biasing Circuit MOS FET IC UHF RF Amplifier |
11/48.21kb |
PDF
|
| BB101C |
Renesas Technology Corp |
Built in Biasing Circuit MOS FET IC UHF RF Amplifier |
8/273.13kb |
PDF
|
| BB101CAU-TL-E |
Renesas Technology Corp |
Built in Biasing Circuit MOS FET IC UHF RF Amplifier |
8/273.13kb |
|
| BB101M |
Hitachi Semiconductor |
Build in Biasing Circuit MOS FET IC UHF RF Amplifier |
11/48.10kb |
PDF
|
| BB101M |
Renesas Technology Corp |
Built in Biasing Circuit MOS FET IC UHF RF Amplifier |
8/274.21kb |
PDF
|
| BB101MAU-TL-E |
Renesas Technology Corp |
Built in Biasing Circuit MOS FET IC UHF RF Amplifier |
8/274.21kb |
|
| BB1020DT |
Bi technologies |
SCSI Termination Resistor network Low Voltage Differential (LVD) |
2/190.45kb |
|
| BB1020DT13 |
Bi technologies |
SCSI Termination Resistor network Low Voltage Differential (LVD) |
2/190.45kb |
|
| BB1020DT13 |
Bi technologies |
SPI-2 (Ultra2) and SPI-3 (Ultra3) compliant |
2/173.73kb |
|
| BB1020DT7 |
Bi technologies |
SCSI Termination Resistor network Low Voltage Differential (LVD) |
2/190.45kb |
|
| BB1020DT7 |
Bi technologies |
SPI-2 (Ultra2) and SPI-3 (Ultra3) compliant |
2/173.73kb |
|
| BB1020DTLF13 |
Bi technologies |
SCSI Termination Resistor network Low Voltage Differential (LVD) |
2/190.45kb |
|
| BB1020DTLF13 |
Bi technologies |
SPI-2 (Ultra2) and SPI-3 (Ultra3) compliant |
2/173.73kb |
|
| BB1020DTLF7 |
Bi technologies |
SCSI Termination Resistor network Low Voltage Differential (LVD) |
2/190.45kb |
|
| BB1020DTLF7 |
Bi technologies |
SPI-2 (Ultra2) and SPI-3 (Ultra3) compliant |
2/173.73kb |
|
| BB1020DT_12 |
Bi technologies |
SPI-2 (Ultra2) and SPI-3 (Ultra3) compliant |
2/173.73kb |
|
| BB102C |
Hitachi Semiconductor |
Build in Biasing Circuit MOS FET IC UHF RF Amplifier |
11/62.37kb |
PDF
|
| BB102M |
Hitachi Semiconductor |
Build in Biasing Circuit MOS FET IC UHF RF Amplifier |
11/64.54kb |
PDF
|
| BB1110B |
List of Unclassifed Manufacturers |
DDR SDRAM TERMINATOR NETWORKS. |
4/91.66kb |
PDF
|
| BB1110B |
Bi technologies |
18 Bit SSTL_2 Termination Sets |
4/289.83kb |
PDF
|
| BB1110B_12 |
Bi technologies |
18 Bit SSTL_2 Termination Sets |
4/289.83kb |
|
| BB1110DI |
Bi technologies |
18 Bit SSTL_2 Termination Sets |
4/289.83kb |
|
| BB1110I |
Bi technologies |
18 Bit SSTL_2 Termination Sets |
4/289.83kb |
|
| BB1110RC |
Bi technologies |
Resistor capacitor network Thick film resistors Ceramic chip capacitors |
2/511.44kb |
|
| BB1110RC13 |
Bi technologies |
Resistor capacitor network Thick film resistors Ceramic chip capacitors |
2/511.44kb |
|
| BB1110RC7 |
Bi technologies |
Resistor capacitor network Thick film resistors Ceramic chip capacitors |
2/511.44kb |
|
| BB1110TB |
List of Unclassifed Manufacturers |
DDR SDRAM TERMINATOR NETWORKS. |
4/91.66kb |
PDF
|
| BB1110TB |
Bi technologies |
18 Bit SSTL_2 Termination Sets |
4/289.83kb |
PDF
|
| BB11112DI |
Bi technologies |
18 Bit SSTL_2 Termination Sets |
4/289.83kb |
|
| BB11113DI |
Bi technologies |
18 Bit SSTL_2 Termination Sets |
4/289.83kb |
|
| BB1111B |
Bi technologies |
18 Bit SSTL_2 Termination Sets |
4/289.83kb |
|
| BB1111DI |
Bi technologies |
18 Bit SSTL_2 Termination Sets |
4/289.83kb |
|
| BB1111TB |
Bi technologies |
18 Bit SSTL_2 Termination Sets |
4/289.83kb |
|
| BB1112B |
Bi technologies |
18 Bit SSTL_2 Termination Sets |
4/289.83kb |
|
| BB1112TB |
Bi technologies |
18 Bit SSTL_2 Termination Sets |
4/289.83kb |
|
| BB1113TB |
Bi technologies |
18 Bit SSTL_2 Termination Sets |
4/289.83kb |
|
| BB112 |
Siemens Semiconductor Group |
Silicon Variable Capacitance Diode (For AM tuning applications Specified tuning range 1 a?| 8.0 V) |
3/41.52kb |
PDF
|
| BB119 |
NXP Semiconductors |
VARIABLE CAPACITANCE DIODE |
4/28.43kb |
|
| BB130 |
NXP Semiconductors |
AM variable capacitance diode |
4/29.06kb |
|
| BB131 |
NXP Semiconductors |
VHF variable capacitance diode |
8/53.84kb |
|
| BB131 |
NXP Semiconductors |
RF Manual 16th edition |
130/9375.07kb |
|
| BB132 |
NXP Semiconductors |
VHF variable capacitance diode |
8/54.12kb |
|
| BB132 |
Leshan Radio Company |
VHF variable capacitance diode |
2/67.94kb |
|
| BB133 |
NXP Semiconductors |
VHF variable capacitance diode |
8/54.10kb |
|
| BB133 |
Leshan Radio Company |
VHF variable capacitance diode |
2/70.45kb |
|
| BB133T1 |
Leshan Radio Company |
VHF variable capacitance diode |
2/61.50kb |
|
| BB134 |
NXP Semiconductors |
UHF variable capacitance diode |
8/54.04kb |
|
| BB134 |
Leshan Radio Company |
UHF variable capacitance diode |
2/38.93kb |
|
| BB135 |
NXP Semiconductors |
UHF variable capacitance diode |
8/53.78kb |
|
| BB135 |
Leshan Radio Company |
UHF variable capacitance diode |
2/38.03kb |
|
| BB135 |
NXP Semiconductors |
RF Manual 16th edition |
130/9375.07kb |
|
| BB141 |
NXP Semiconductors |
Low-Voltage Variable Capacitance Diode |
8/44.19kb |
|
| BB141 |
Leshan Radio Company |
Low-Voltage Variable Capacitance Diode |
2/126.74kb |
|
| BB142 |
NXP Semiconductors |
Low-Voltage Variable Capacitance Diode |
8/44.12kb |
|
| BB142 |
Leshan Radio Company |
Low-Voltage Variable Capacitance Diode |
2/127.03kb |
|
| BB143 |
NXP Semiconductors |
Low-Voltage Variable Capacitance Diode |
8/44.15kb |
|
| BB143 |
Leshan Radio Company |
Low-Voltage Variable Capacitance Diode |
2/127.58kb |
|