sn74auc2g07dckr逻辑芯片,缓冲器

特性

• available in the texas instruments nanofree™ package
• optimized for 1.8-v operation and is 3.6-v i/o tolerant to support mixed-mode signal operation
• i_offsupports partial-power-down mode operation
• sub-1-v operable
• max t_pdof 2.5 ns at 1.8 v
• low power consumption, 10 µa at 1.8 v
• ±8-ma output drive at 1.8 v
• latch-up performance exceeds 100 ma per jesd 78, class ii
• esd protection exceeds jesd 22
  • 2000-v human-body model (a114-a)
  • 200-v machine model (a115-a)
  • 1000-v charged-device model (c101)