无锡华晶mos管cs12n60a8hd 直销 华晶场效应管
| 品牌 |
华晶 |
型号 |
cs12n60a8hd |
| 种类 |
绝缘栅(mosfet) |
沟道类型 |
n沟道 |
| 导电方式 |
耗尽型 |
封装外形 |
smd(so)/表面封装 |
| 材料 |
n-fet硅n沟道 |
开启电压 |
600（v） |
| 夹断电压 |
30（v） |
最大漏极电流 |
12a（ma） |
| 最大耗散功率 |
140（mw） |
| |
general description：
vdss 600 v
id 12 a
pd (tc=25℃) 140 w
rds(on) 0.55 ω
cs12n60a8hd, the silicon n-channel enhanced
vdmosfets, is obtained by the self-aligned planar
technology which reduce the conduction loss, improve
switching performance and enhance the avalanche energy. the
transistor can be used in various power switching circuit for
system miniaturization and higher efficiency. the package form is
to-220ab, which accords with the rohs standard.
features：
z fast switching
z esd improved capability
z low gate charge (typical data:58nc)
z low reverse transfer capacitances(typical:90pf)
z 100% single pulse avalanche energy test