可控硅bta06/bta12 / bta16

品牌 st意法半导体 型号 bta06/bta08/bta12/bta16
控制方式 双向 极数 三极
封装材料 塑料封装 封装外形 平板形
关断速度 高频(快速) 散热功能 带散热片
功率特性 大功率 频率特性 高频
额定正向平均电流 1-80(a) 控制极触发电压 600-1200(v)
控制极触发电流 50(ma) 正向重复峰值电压 600(v)
反向阻断峰值电压 600(v)

st原装正品bta06,bta08,bta12,bta16

 

main features:
description
suitable for ac switching operations, the bta/
btb06 series can be used as an on/off function
in applications such as static relays, heating
regulation, induction motor starting circuits... or for
phase control in light dimmers, motor speed
controllers,...
the snubberless and logic level versions (bta/
btb...w) are specially recommended for use on
inductive loads, thanks to their high commutation
performances. by using an internal ceramic pad,
the bta series provides voltage insulated tab
(rated at 2500v rms) complying with ul
standards (file ref.: e81734)
symbol value unit
it(rms) 6 a
vdrm/vrrm 600 and 800 v
ig (q1) 5 to 50 ma
absolute maximum ratings
symbol parameter value unit
it(rms) rms on-state current (full sine wave) to-220ab tc = 110°c
6
a
to-220ab ins. tc = 105°c
itsm non repetitive surge peak on-state
current (full cycle, tj initial = 25°c)
f = 50 hz t = 20 ms 60 a
f = 60 hz t = 16.7 ms 63
i²t i²t value for fusing tp = 10 ms 21 a²s
di/dt
critical rate of rise of on-state current
ig = 2 x igt , tr £ 100 ns f = 120 hz tj = 125°c 50 a/μs
igm peak gate current tp = 20 μs tj = 125°c 4 a
pg(av) average gate power dissipation tj = 125°c 1 w
tstg
tj
storage junction temperature range
operating junction temperature range
- 40 to + 150
- 40 to + 125
°c
g
a2
a1
g
a2
a2
a1
g
a2
a1
to-220ab
(btb06)
to-220ab insulated
(bta06)