，可控硅，bt138 600e，nxp恩智浦

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quick reference data

symbol	parameter	max.	max.	max.	unit
	bt138-	500e	600e	800e
vdrm	repetitive peak off-state voltages	500	600	800	v
it(rms)itsm	rms on-state current non-repetitive peak on-state	12 95	12 95	12 95	a a
	current

limiting values

limiting values in accordance with the absolute maximum system (iec 134).

symbol	parameter	conditions	min.	max.			unit
				-500	-600	-800
vdrm	repetitive peak off-state		-	5001	6001	800	v
	voltages						a
it(rms)itsm	rms on-state current non-repetitive peak	full sine wave; tmb £99 °c full sine wave; tj= 25 °c prior to	-	12
	on-state current	surge
		t = 20 ms	-	95			a
		t = 16.7 ms	-	105			a
i2t	i2t for fusing	t = 10 ms	-	45			a2s
dit/dt	repetitive rate of rise of	itm= 20 a; ig= 0.2 a;
	on-state current after	dig/dt = 0.2 a/ms
	triggering	t2+ g+	-	50			a/ms
		t2+ g-t2- g-	--	50 50			a/ms a/ms
		t2- g+	-	10			a/ms
igm	peak gate current		-	2			a
vgm	peak gate voltage		-	5			v
pgm	peak gate power		-	5			w
pg(av)tstgtj	average gate power storage temperature operating junction	over any 20 ms period	--40 -	0.5 150 125			w °c °c
	temperature

详细参数：http://www.nxp.com/documents/data_sheet/bt138_ser_d_e.pdf

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