•
amplifier and general purpose applications.
2sc1815 is npn silicon epitaxial transistor designed for rf, af
•
capable of 0.4watts of power dissipation.
•
collector-current 0.15a
•
collector-base voltage 60v
•
marking : c1815
x
classification rating 94v-0
case material: molded plastic. ul flammabilityand msl rating 1
electrical characteristics @ 25
oc unless otherwise specified
symbol parameter min max units
off characteristics
v
(i
50 vdc
v
(i
60 vdc
v
(i
1.45 vdc
i
(v
0.1 uadc
i
(v
0.1 uadc
i
(v
0.1 uadc
(br)ceocollector-emitter breakdown voltage*c=0.1madc, ib=0)(br)cbocollector-base breakdown voltagec=100uadc, ie=0)befemitter-base voltagee=310madc)cbocollector cutoff currentcb=60vdc, ie=0adc)ceocollector cutoff currentcb=50vdc, ie=0adc)eboemitter cutoff currenteb=5.0vdc, ic=0adc)on characteristics
h
(i
v
(i
v
(i
fe(1)dc current gain*c=2.0madc, vce=6.0vdc) 70 700ce(sat)collector-emitter saturation voltagec=100madc, ib=10madc) 0.25 vdcbe(sat)base-emitter saturation voltagec=100madc, ib=10madc) 1.0 vdcsmall-signal characteristics
f
(i
ttransistor frequencyc=1.0madc, vce=10vdc, f=30mhz) 80 mhzclassification of h
fe (1)rank o y gr bl
range 70-140 120-240 200-400 350-700
pac components (hk) pte limited kevin.li/李鸿文
hp: (86) 13631668403 qq:937632166
tel: (0755) 83038649 fax: (0755) 83038749
email:kevin.li@paccom.net msn:hongwenli@msn.cn
website:http://www.paccom.com.sg skype:kevin.king84
深圳办事处地址:room 1222 ,top office glitstery gity, no.3027 shennan rd central, shenzhen /深圳福田区深南中路3027号嘉汇新城汇商中心1222
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