830 nm high-power laser diode (al830t) | features: output power: 1w(cw)
variety of stripe width
efficient quantum well structure
to package or c-mount package | | application: solid-state laser pumping
medical usage
beacons and iiiumination
free-space communication
infrared light sources |
specifications: parameter | value | al830t1000 | cw output power (mw) | 500 | peak wavelength (nm) | 830±10 | spectral width (nm) | ≤5 | threshold current (a) | ≤0.45 | operating current (a) | ≤1.2 | operating voltage (v) | ≤2.2 | slope efficiency (w/a) | ≥1 | beam divergence θ⊥×θ∥(deg.) | ≤38×12 | wavelength temperature coefficient (nm/℃) | 0.3 | emitting area (μm) | 50×1 | serial resistance (ω) | ≤1.5 | polarization mode | te | package | to-5, to-3, c-mount |
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