分离式半导体产品 SH8K5TB1品牌、价格、PDF参数

SH8K5TB1 • 品牌、价格
元器件型号 厂商 描述 数量 价格
SH8K5TB1 Rohm Semiconductor MOSFET N-CH DUAL 30V 3.5A SOP8 0 2,500:$0.32625
5,000:$0.30375
10,000:$0.29250
25,000:$0.28125
SH8K5TB1 Rohm Semiconductor MOSFET N-CH DUAL 30V 3.5A SOP8 2,470 1:$0.99000
25:$0.76520
100:$0.67500
250:$0.58500
500:$0.49500
1,000:$0.39375
SH8K5TB1 Rohm Semiconductor MOSFET N-CH DUAL 30V 3.5A SOP8 2,470 1:$0.99000
25:$0.76520
100:$0.67500
250:$0.58500
500:$0.49500
1,000:$0.39375
QS8K2TR Rohm Semiconductor MOSFET 2N-CH 30V 3.5A TSMT8 3,000 3,000:$0.33205
6,000:$0.30915
15,000:$0.29770
30,000:$0.28625
75,000:$0.28167
150,000:$0.27480
QS8K2TR Rohm Semiconductor MOSFET 2N-CH 30V 3.5A TSMT8 5,500 1:$1.01000
10:$0.87000
25:$0.77880
100:$0.68700
250:$0.59540
500:$0.50380
1,000:$0.40075
QS8K2TR Rohm Semiconductor MOSFET 2N-CH 30V 3.5A TSMT8 5,500 1:$1.01000
10:$0.87000
25:$0.77880
100:$0.68700
250:$0.59540
500:$0.50380
1,000:$0.40075
SH8K5TB1 • PDF参数
类别: 分离式半导体产品
FET 型: 2 个 N 沟道(双)
FET 特点: 逻辑电平门
漏极至源极电压(Vdss): 30V
电流 - 连续漏极(Id) @ 25° C: 3.5A
开态Rds(最大)@ Id, Vgs @ 25° C: 83 毫欧 @ 3.5A,10V
Id 时的 Vgs(th)(最大): 2.5V @ 1mA
闸电荷(Qg) @ Vgs: 3.5nC @ 5V
输入电容 (Ciss) @ Vds: 140pF @ 10V
功率 - 最大: 2W
安装类型: 表面贴装
封装/外壳: 8-SOIC(0.154",3.90mm 宽)
供应商设备封装: 8-SOP
包装: 带卷 (TR)