分离式半导体产品 BSD840N H6327品牌、价格、PDF参数

BSD840N H6327 • 品牌、价格
元器件型号 厂商 描述 数量 价格
BSD840N H6327 Infineon Technologies MOSFET N-CH 20V 0.88A SOT363 0 3,000:$0.08540
6,000:$0.07686
15,000:$0.06832
30,000:$0.06405
75,000:$0.05679
150,000:$0.05338
BSD235N H6327 Infineon Technologies MOSFET N-CH DUAL 20V SOT363 5,590 1:$0.49000
10:$0.34500
25:$0.28520
100:$0.23000
250:$0.16560
500:$0.13340
1,000:$0.10350
BSD235N H6327 Infineon Technologies MOSFET N-CH DUAL 20V SOT363 5,590 1:$0.49000
10:$0.34500
25:$0.28520
100:$0.23000
250:$0.16560
500:$0.13340
1,000:$0.10350
BSD235N H6327 Infineon Technologies MOSFET N-CH DUAL 20V SOT363 3,000 3,000:$0.08280
6,000:$0.07820
15,000:$0.07130
30,000:$0.06670
75,000:$0.05980
150,000:$0.05750
2N7002DW H6327 Infineon Technologies MOSFET 2N-CH 60V 0.3A SOT363 5,964 1:$0.44000
10:$0.31500
25:$0.24880
100:$0.18900
250:$0.13388
500:$0.10710
1,000:$0.08190
2N7002DW H6327 Infineon Technologies MOSFET 2N-CH 60V 0.3A SOT363 5,964 1:$0.44000
10:$0.31500
25:$0.24880
100:$0.18900
250:$0.13388
500:$0.10710
1,000:$0.08190
2N7002DW H6327 Infineon Technologies MOSFET 2N-CH 60V 0.3A SOT363 3,000 3,000:$0.06300
6,000:$0.05670
15,000:$0.05040
30,000:$0.04725
75,000:$0.04190
150,000:$0.03938
BSD840N H6327 • PDF参数
类别: 分离式半导体产品
FET 型: 2 个 N 沟道(双)
FET 特点: 逻辑电平门
漏极至源极电压(Vdss): 20V
电流 - 连续漏极(Id) @ 25° C: 880mA
开态Rds(最大)@ Id, Vgs @ 25° C: 400 毫欧 @ 880mA,2.5V
Id 时的 Vgs(th)(最大): 750mV @ 1.6µA
闸电荷(Qg) @ Vgs: 0.26nC @ 2.5V
输入电容 (Ciss) @ Vds: 78pF @ 10V
功率 - 最大: 500mW
安装类型: 表面贴装
封装/外壳: 6-TSSOP,SC-88,SOT-363
供应商设备封装: PG-SOT363-6
包装: 带卷 (TR)