分离式半导体产品 BSO203P H品牌、价格、PDF参数

BSO203P H • 品牌、价格
元器件型号 厂商 描述 数量 价格
BSO203P H Infineon Technologies MOSFET P-CH 20V 7A DSO-8 4,980 1:$1.79000
10:$1.53100
25:$1.37760
100:$1.25000
250:$1.12244
500:$0.96938
1,000:$0.81632
BSO203P H Infineon Technologies MOSFET P-CH 20V 7A DSO-8 2,500 2,500:$0.68877
5,000:$0.66326
12,500:$0.63775
25,000:$0.62500
62,500:$0.61224
BSO303P H Infineon Technologies MOSFET 2P-CH 30V 7A DSO-8 4,941 1:$1.77000
10:$1.51600
25:$1.36400
100:$1.23770
250:$1.11144
500:$0.95988
1,000:$0.80832
BSO303P H Infineon Technologies MOSFET 2P-CH 30V 7A DSO-8 4,941 1:$1.77000
10:$1.51600
25:$1.36400
100:$1.23770
250:$1.11144
500:$0.95988
1,000:$0.80832
BSO303P H Infineon Technologies MOSFET 2P-CH 30V 7A DSO-8 2,500 2,500:$0.68202
5,000:$0.65676
12,500:$0.63150
25,000:$0.61887
62,500:$0.60624
BSO203P H • PDF参数
类别: 分离式半导体产品
FET 型: 2 个 P 沟道(双)
FET 特点: 逻辑电平门
漏极至源极电压(Vdss): 20V
电流 - 连续漏极(Id) @ 25° C: 7A
开态Rds(最大)@ Id, Vgs @ 25° C: 21 毫欧 @ 8.2A,4.5V
Id 时的 Vgs(th)(最大): 1.2V @ 100µA
闸电荷(Qg) @ Vgs: 39nC @ 4.5V
输入电容 (Ciss) @ Vds: 3750pF @ 15V
功率 - 最大: 1.6W
安装类型: 表面贴装
封装/外壳: 8-SOIC(0.154",3.90mm 宽)
供应商设备封装: P-DSO-8
包装: 剪切带 (CT)