分离式半导体产品 PMDPB65UP,115品牌、价格、PDF参数

PMDPB65UP,115 • 品牌、价格
元器件型号 厂商 描述 数量 价格
PMDPB65UP,115 NXP Semiconductors MOSFET P-CH 20V DUAL SOT1118 572 1:$0.72000
10:$0.63200
25:$0.55840
100:$0.48650
250:$0.42352
500:$0.36050
1,000:$0.28875
PMDPB65UP,115 NXP Semiconductors MOSFET P-CH 20V DUAL SOT1118 0 3,000:$0.25400
6,000:$0.23600
15,000:$0.22800
30,000:$0.21900
75,000:$0.21500
150,000:$0.21000
2N7002PS,115 NXP Semiconductors MOSFET N-CH DUAL 60V SOT-363 432 1:$0.48000
10:$0.34800
25:$0.27040
100:$0.20480
250:$0.14476
500:$0.11588
1,000:$0.08888
2N7002PS,115 NXP Semiconductors MOSFET N-CH DUAL 60V SOT-363 432 1:$0.48000
10:$0.34800
25:$0.27040
100:$0.20480
250:$0.14476
500:$0.11588
1,000:$0.08888
2N7002PS,115 NXP Semiconductors MOSFET N-CH DUAL 60V SOT-363 0 3,000:$0.07500
6,000:$0.06800
15,000:$0.06000
30,000:$0.05600
75,000:$0.05000
150,000:$0.04700
PMDPB65UP,115 • PDF参数
类别: 分离式半导体产品
FET 型: 2 个 P 沟道(双)
FET 特点: 逻辑电平门
漏极至源极电压(Vdss): 20V
电流 - 连续漏极(Id) @ 25° C: 3.5A
开态Rds(最大)@ Id, Vgs @ 25° C: 70 毫欧 @ 1A,4.5V
Id 时的 Vgs(th)(最大): 1V @ 250µA
闸电荷(Qg) @ Vgs: 6nC @ 4.5V
输入电容 (Ciss) @ Vds: 380pF @ 10V
功率 - 最大: 520mW
安装类型: 表面贴装
封装/外壳: 6-UDFN 裸露焊盘
供应商设备封装: 6-HUSON
包装: 剪切带 (CT)